KIKUTA Toshio | Optoelectronics Joint Research Laboratory
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概要
関連著者
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KIKUTA Toshio
Optoelectronics Joint Research Laboratory
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Ishida Koichi
Optoelectronics Joint Research Laboratory
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Kikuta T
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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石田 謙司
神戸大学 大学院工学研究科
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Fukuda Tsuguo
Optoelectronics Joint Research Laboratory
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TERASHIMA Kazutaka
Optoelectronics Joint Research Laboratory
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Katsumata T
Department Of Applied Chemistry Toyo University
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Tsukada N
Aomori Univ. Aomori Jpn
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Tsukada Noriaki
Optoelectronics Joint Research Laboratory
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Ishida Koichi
Optoelectronics Joint Research Laboratory:(present Address) Fundamental Research Laboratories Nec Co
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OBOKATA Takeshi
Optoelectronics Joint Research Laboratory
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Emori Haruo
Optoelectronics Joint Research Laboratory
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YAHATA Akihiro
Research and Development Center, Toshiba Corporation
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Yahata A
Research And Development Center Toshiba Corporation
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Yahata Akihiro
Optoelectronics Joint Research Laboratory
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Matsumura T
Department Of Electronic Engineering Faculty Of Engineering Gunma University
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MATSUMURA Takao
Optoelectronics Joint Research Laboratory
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ORITO Fumio
Optoelectronics Joint Research Laboratory
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OBOKATA Takeshi
Optoelectronics Joint-Research Laboratory
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Terashima K
Nec Corp. Kanagawa Jpn
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Inada Tomoki
Optoelectronics Joint Research Laboratory
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KATSUMATA Tooru
Optoelectronics Joint Research Laboratory
著作論文
- Study of 0.8 eV Deep Level Photoluminescence in Undoped LEC Semi-Insulating GaAs
- Study of Two Different Deep Levels in Undoped LEC SI-GaAs by Photoluminescence Spectroscopy
- Improved Uniformity of Resistivity Distribution in LEC Semi-Insulating GaAs Produced by Annealing
- Effect of Ambient Gas on Undoped LEC GaAs Crystal
- Effect of Water Content of B_2O_3 Encapsulant on Semi-Insulating LEC GaAs Crystal
- Reply to "Comment on 'Intracenter Transition in EL2 Observed in Photocurrent Spectrum'"
- Three Midgap Levels in LEC n-GaAs Determined by DLTS Using Au and Al Schottky Barrier Diodes
- Photo-Electron Paramagnetic Resonance Study of As_ Antisite Defect in As-Grown GaAs Crystals of Different Stoichiometry
- Intracenter Transition in EL2 Observed in Photocurrent Spectrum
- Distinction between Midgap Levels in LEC n-GaAs Determined by DLTS and Optical Absorption at 1.1 μm
- Electrical Resistivity of Undoped GaAs Single Crystals Grown by Magnetic Field Applied LEC Technique