Effect of Water Content of B_2O_3 Encapsulant on Semi-Insulating LEC GaAs Crystal
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概要
- 論文の詳細を見る
Undoped LEC GaAs crystals were grown in PBN crucibles using dry and wet B_2O_3. The influence of the water content of B_2O_3 on the melt composition and the electrical properties of the crystal was examined, and it was found that when a highly Ga-rich charge composition was used, crystals grown using wet B_2O_3 became semi-insulating, while crystals grown using dry B_2O_3 were p-type conductive. The purity of crystals was investigated through SIMS analysis, LVM IR absorption measurement, and ^3He activation analysis.
- 社団法人応用物理学会の論文
- 1985-05-20
著者
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Fukuda Tsuguo
Optoelectronics Joint Research Laboratory
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OBOKATA Takeshi
Optoelectronics Joint Research Laboratory
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KIKUTA Toshio
Optoelectronics Joint Research Laboratory
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Emori Haruo
Optoelectronics Joint Research Laboratory
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Katsumata T
Department Of Applied Chemistry Toyo University
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Inada Tomoki
Optoelectronics Joint Research Laboratory
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OBOKATA Takeshi
Optoelectronics Joint-Research Laboratory
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