Saddle-Type Bow of As-Cut GaAs Wafers
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概要
- 論文の詳細を見る
Bow of as-cut GaAs wafers sliced by internal diameter diamond saw was studied. The crystals used were [001]-oriented GaAs grown by LEC technique. It was found that the bow of all wafers was a saddle type independent of doped impurities (undoped, Si-doped and Cr-doped). The form of saddle is related to particular crystal orientations of the zinc blende structure.
- 社団法人応用物理学会の論文
- 1983-03-20
著者
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Fukuda Tsuguo
Optoelectronics Joint Research Laboratory
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OBOKATA Takeshi
Optoelectronics Joint Research Laboratory
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Emori Haruo
Optoelectronics Joint Research Laboratory
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OBOKATA Takeshi
Optoelectronics Joint-Research Laboratory
関連論文
- Growth and Resistivity Characteristics of Undoped Semi-Insulating GaAs Crystals with Low Dislocation Density
- Growth of Undoped Semi-Insulating GaAs Single Crystal : C-2: III-V CRYSTALS/JOSEPHSON JUNCTION
- Effect of Melt Stoichiometry on Electrical Activation Uniformity of Si-Implanted Layers in Undoped Semi-Insulating GaAs
- Improved Uniformity of Resistivity Distribution in LEC Semi-Insulating GaAs Produced by Annealing
- Effect of Ambient Gas on Undoped LEC GaAs Crystal
- Resistivity, Hall Mobility and Leakage Current Variations in Undoped Semi-Insulating GaAs Crystal Grown by LEC Method
- Nondestructive and Noncontact Observation of Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope
- Nondestructive and Noncontact Observation of Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope
- Effect of Carbon Concentration on Thermal Conversion in Semi-Insulating GaAs
- Influence of Melt Composition on Uniformity of Electrical Properties in Semi-Insulating LEC GaAs
- Inhomogeneity of Resistivity in In-Doped Dislocation-Free Semi-Insulating LEC GaAs
- Growth of Low and Homogeneous Dislocation Density GaAs Crystal by Improved LEC Technique
- LEC Growth Technique for Homogeneous Undoped Semi-Insulating GaAs Single Crystals with in-situ Melt Purification Process
- Effect of Water Content of B_2O_3 Encapsulant on Semi-Insulating LEC GaAs Crystal
- Saddle-Type Bow of As-Cut GaAs Wafers
- Effect of Magnetic Field on Residual Impurity Concentration in LEC GaAs Single Crystal
- Vertical Magnetic Field Applied LEC Apparatus for Large Diameter GaAs Single Crystal Growth
- Electrical Resistivity of Undoped GaAs Single Crystals Grown by Magnetic Field Applied LEC Technique