Inhomogeneity of Resistivity in In-Doped Dislocation-Free Semi-Insulating LEC GaAs
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概要
- 論文の詳細を見る
In-doped dislocation-free semi-insulating GaAs crystals were prepared from various melt compositions and measurement of resistivity distributions and infrared absorption at 1 μm were carried out. Inhomogeneity of resistivity, both along the radial and longitudinal directions, was observed even in some dislocation-free crystals. This inhomogeneity strongly depends on melt composition, and is mainly due to non-uniform distribution of stoichiometry-related defects revealed by infrared absorption measurement.
- 社団法人応用物理学会の論文
- 1985-09-20
著者
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Fukuda Tsuguo
Optoelectronics Joint Research Laboratory
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Miyairi Hiroo
Optoelectronics Joint Research Laboratory
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NAKAJIMA Masato
Optoelectronics Joint Research Laboratory
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OBOKATA Takeshi
Optoelectronics Joint Research Laboratory
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Obokata T
Optoelectronics Joint-research Laboratory
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Inada Tomoki
Optoelectronics Joint Research Laboratory
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Katsumata Toru
Optoelectronics Joint Research Laboratory
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OBOKATA Takeshi
Optoelectronics Joint-Research Laboratory
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