Fukuda Tsuguo | Optoelectronics Joint Research Laboratory

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著作論文

Growth and Resistivity Characteristics of Undoped Semi-Insulating GaAs Crystals with Low Dislocation Density
Growth of Undoped Semi-Insulating GaAs Single Crystal : C-2: III-V CRYSTALS/JOSEPHSON JUNCTION
Effect of Melt Stoichiometry on Electrical Activation Uniformity of Si-Implanted Layers in Undoped Semi-Insulating GaAs
Improved Uniformity of Resistivity Distribution in LEC Semi-Insulating GaAs Produced by Annealing
Effect of Ambient Gas on Undoped LEC GaAs Crystal
Resistivity, Hall Mobility and Leakage Current Variations in Undoped Semi-Insulating GaAs Crystal Grown by LEC Method
Nondestructive and Noncontact Observation of Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope
Nondestructive and Noncontact Observation of Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope
Effect of Carbon Concentration on Thermal Conversion in Semi-Insulating GaAs
Influence of Melt Composition on Uniformity of Electrical Properties in Semi-Insulating LEC GaAs
Inhomogeneity of Resistivity in In-Doped Dislocation-Free Semi-Insulating LEC GaAs
Growth of Low and Homogeneous Dislocation Density GaAs Crystal by Improved LEC Technique
LEC Growth Technique for Homogeneous Undoped Semi-Insulating GaAs Single Crystals with in-situ Melt Purification Process
Effect of Water Content of B_2O_3 Encapsulant on Semi-Insulating LEC GaAs Crystal
Saddle-Type Bow of As-Cut GaAs Wafers
Effect of Magnetic Field on Residual Impurity Concentration in LEC GaAs Single Crystal
Vertical Magnetic Field Applied LEC Apparatus for Large Diameter GaAs Single Crystal Growth
Electrical Resistivity of Undoped GaAs Single Crystals Grown by Magnetic Field Applied LEC Technique

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