Growth of Low and Homogeneous Dislocation Density GaAs Crystal by Improved LEC Technique
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概要
- 論文の詳細を見る
An improved LEC technique of enhanced heating of B_2O_3 encapsulant layer through the windows of susceptor cylinder is described. By this technique, low temperature gradients of 10〜25℃/cm in the axial direction and 5℃/cm in the radial direction were achieved. Two-inch diameter crystals grown by this technique with a slow cooling rate exhibited quite low dislocation density of 8×10^3 to low 10^4 cm^<-2> order from front to tail of the crystal.
- 社団法人応用物理学会の論文
- 1984-01-20
著者
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Fukuda Tsuguo
Optoelectronics Joint Research Laboratory
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SHIMADA Takashi
Optoelectronics Joint Research Laboratory
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TERASHIMA Kazutaka
Optoelectronics Joint Research Laboratory
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Nakajima Hiroaki
Optoelectronics Joint Research Laboratory
関連論文
- Growth and Resistivity Characteristics of Undoped Semi-Insulating GaAs Crystals with Low Dislocation Density
- Growth of Undoped Semi-Insulating GaAs Single Crystal : C-2: III-V CRYSTALS/JOSEPHSON JUNCTION
- Study of 0.8 eV Deep Level Photoluminescence in Undoped LEC Semi-Insulating GaAs
- Study of Two Different Deep Levels in Undoped LEC SI-GaAs by Photoluminescence Spectroscopy
- Effect of Melt Stoichiometry on Electrical Activation Uniformity of Si-Implanted Layers in Undoped Semi-Insulating GaAs
- Striations in Undoped Semi-Insulating LEC GaAs
- Improved Uniformity of Resistivity Distribution in LEC Semi-Insulating GaAs Produced by Annealing
- Effect of Ambient Gas on Undoped LEC GaAs Crystal
- Resistivity, Hall Mobility and Leakage Current Variations in Undoped Semi-Insulating GaAs Crystal Grown by LEC Method
- Nondestructive and Noncontact Observation of Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope
- Nondestructive and Noncontact Observation of Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope
- Effect of Carbon Concentration on Thermal Conversion in Semi-Insulating GaAs
- Influence of Melt Composition on Uniformity of Electrical Properties in Semi-Insulating LEC GaAs
- Inhomogeneity of Resistivity in In-Doped Dislocation-Free Semi-Insulating LEC GaAs
- Growth of Low and Homogeneous Dislocation Density GaAs Crystal by Improved LEC Technique
- LEC Growth Technique for Homogeneous Undoped Semi-Insulating GaAs Single Crystals with in-situ Melt Purification Process
- Effect of Water Content of B_2O_3 Encapsulant on Semi-Insulating LEC GaAs Crystal
- Saddle-Type Bow of As-Cut GaAs Wafers
- Effect of Magnetic Field on Residual Impurity Concentration in LEC GaAs Single Crystal
- Vertical Magnetic Field Applied LEC Apparatus for Large Diameter GaAs Single Crystal Growth
- Electrical Resistivity of Undoped GaAs Single Crystals Grown by Magnetic Field Applied LEC Technique