Electrical Resistivity of Undoped GaAs Single Crystals Grown by Magnetic Field Applied LEC Technique
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概要
- 論文の詳細を見る
We have grown undoped GaAs single crystals by magnetic field applied LEC (MLEC) technique and measured their electrical and optical properties. The most striking result was that the electrical resistivity of undoped GaAs changed from being semi-insulating (10^8 ohm-cm) to semi-conducting (10 ohm-cm) by increasing the magnetic field (0 to 1300 Oe). PL, DLTS and SIMS measurements suggest that the decrease of resistivity is mainly due to the decrease in concentration of the deep level defects.
- 社団法人応用物理学会の論文
- 1983-06-20
著者
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Fukuda Tsuguo
Optoelectronics Joint Research Laboratory
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KIKUTA Toshio
Optoelectronics Joint Research Laboratory
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TERASHIMA Kazutaka
Optoelectronics Joint Research Laboratory
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ORITO Fumio
Optoelectronics Joint Research Laboratory
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KATSUMATA Tooru
Optoelectronics Joint Research Laboratory
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