Effect of Magnetic Field on Residual Impurity Concentration in LEC GaAs Single Crystal
スポンサーリンク
概要
- 論文の詳細を見る
Effect of magnetic field on impurity concentration incorporated into an LEC GaAs crystal has been studied. The contamination from crucibles and/or B_2O_3 has been found to tend to be reduced by application of a magnetic field during puling. The residual or intentionally doped carbon concentration decreased and doped chromium concentration increased under the magnetic field. These results are explained by assuming that the GaAs melt convection is suppressed and the effective viscosity of the melt is increased under the magnetic field.
- 社団法人応用物理学会の論文
- 1984-07-20
著者
-
Fukuda Tsuguo
Optoelectronics Joint Research Laboratory
-
TERASHIMA Kazutaka
Optoelectronics Joint Research Laboratory
-
Katsumata T
Department Of Applied Chemistry Toyo University
-
ORITO Fumio
Optoelectronics Joint Research Laboratory
-
Terashima K
Nec Corp. Kanagawa Jpn
-
KATSUMATA Tooru
Optoelectronics Joint-Research Laboratory
-
KATSUMATA Tooru
Optoelectronics Joint Research Laboratory
関連論文
- Study of Point Defects in Bulk ZnSe Grown by Nonstoichiometric Annealing
- Growth and Resistivity Characteristics of Undoped Semi-Insulating GaAs Crystals with Low Dislocation Density
- Growth of Undoped Semi-Insulating GaAs Single Crystal : C-2: III-V CRYSTALS/JOSEPHSON JUNCTION
- Large Crystals on Cu Film Surfaces Irradiated by a Glow Discharge Plasma
- Electric Resistance Changes of Metal Films Irradiated by a Weakly Ionized Plasma
- Study of 0.8 eV Deep Level Photoluminescence in Undoped LEC Semi-Insulating GaAs
- Study of Two Different Deep Levels in Undoped LEC SI-GaAs by Photoluminescence Spectroscopy
- Effect of Melt Stoichiometry on Electrical Activation Uniformity of Si-Implanted Layers in Undoped Semi-Insulating GaAs
- Striations in Undoped Semi-Insulating LEC GaAs
- Improved Uniformity of Resistivity Distribution in LEC Semi-Insulating GaAs Produced by Annealing
- Effect of Ambient Gas on Undoped LEC GaAs Crystal
- Resistivity, Hall Mobility and Leakage Current Variations in Undoped Semi-Insulating GaAs Crystal Grown by LEC Method
- In Situ Observation of Etching Processes of Silica Glasses by Silicon Melts
- Nondestructive and Noncontact Observation of Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope
- Nondestructive and Noncontact Observation of Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope
- Effect of Carbon Concentration on Thermal Conversion in Semi-Insulating GaAs
- Influence of Melt Composition on Uniformity of Electrical Properties in Semi-Insulating LEC GaAs
- Inhomogeneity of Resistivity in In-Doped Dislocation-Free Semi-Insulating LEC GaAs
- Growth of Low and Homogeneous Dislocation Density GaAs Crystal by Improved LEC Technique
- LEC Growth Technique for Homogeneous Undoped Semi-Insulating GaAs Single Crystals with in-situ Melt Purification Process
- Effect of Water Content of B_2O_3 Encapsulant on Semi-Insulating LEC GaAs Crystal
- Saddle-Type Bow of As-Cut GaAs Wafers
- Effect of Magnetic Field on Residual Impurity Concentration in LEC GaAs Single Crystal
- Vertical Magnetic Field Applied LEC Apparatus for Large Diameter GaAs Single Crystal Growth
- Photoluminescence of Low-Energy B^+-Implanted Silicon under Ultraviolet Light Excitation
- Photoluminescence of Low-Energy B± Implanted Silicon under Ultraviolet Light Excitation
- Nuclear Magnetic Resonance of ^7Li in Li_2B_4O_7 Single Crystal and Glass
- Nuclear Magnetic Resonance of ^7Li in LiBO_2 Crystal
- Electrical Resistivity of Undoped GaAs Single Crystals Grown by Magnetic Field Applied LEC Technique