TERASHIMA Kazutaka | Optoelectronics Joint Research Laboratory

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概要

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著作論文

Study of 0.8 eV Deep Level Photoluminescence in Undoped LEC Semi-Insulating GaAs
Study of Two Different Deep Levels in Undoped LEC SI-GaAs by Photoluminescence Spectroscopy
Effect of Melt Stoichiometry on Electrical Activation Uniformity of Si-Implanted Layers in Undoped Semi-Insulating GaAs
Striations in Undoped Semi-Insulating LEC GaAs
Improved Uniformity of Resistivity Distribution in LEC Semi-Insulating GaAs Produced by Annealing
Resistivity, Hall Mobility and Leakage Current Variations in Undoped Semi-Insulating GaAs Crystal Grown by LEC Method
Growth of Low and Homogeneous Dislocation Density GaAs Crystal by Improved LEC Technique
LEC Growth Technique for Homogeneous Undoped Semi-Insulating GaAs Single Crystals with in-situ Melt Purification Process
Effect of Magnetic Field on Residual Impurity Concentration in LEC GaAs Single Crystal
Vertical Magnetic Field Applied LEC Apparatus for Large Diameter GaAs Single Crystal Growth
Electrical Resistivity of Undoped GaAs Single Crystals Grown by Magnetic Field Applied LEC Technique

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