Ishida Koichi | Optoelectronics Joint Research Laboratory

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概要

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著作論文

Electrical and Optical Properties of Si Doped GaAs Grown by Molecular Beam Epitaxy on (311) Substrates
Disordering of Surface Regions in Si-Implanted Superlattices of GaAs/AlGaAs
SIMS Study of Si-Be Co-doping Effects for Suppression of Compositional Disordering in AlGaAs-GaAs Superlattices
Implantation Energy Dependence of Composilional Disordering in Si Implanted GaAs/AlGaAs Superlattices Studied by Secondary Jon Mass Speetrometry
SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs-GaAs Superlattice
Photoquenching and Recovery Effects of EL2 Absorption in GaAs : Optical Properties of Condensed Matter
Above Band-Gap Excitation Process of the 0.6 eV Luminescence Band in GaAs
Tetragonal Lattice Distortion and Tensile Stress in GaAs Layers Grown on Si Substrates by MOCVD
Misfit and Threading Dislocations in GaAs Layers Grown on Si Substrates by MOCVD
Characterization of Lattice Defect Structures at GaAs/Si Interface by Transmission Electron Microscopy
Study of 0.8 eV Deep Level Photoluminescence in Undoped LEC Semi-Insulating GaAs
Study of Two Different Deep Levels in Undoped LEC SI-GaAs by Photoluminescence Spectroscopy
Effect of Melt Stoichiometry on Electrical Activation Uniformity of Si-Implanted Layers in Undoped Semi-Insulating GaAs
Striations in Undoped Semi-Insulating LEC GaAs
Cross Sectional Transmission Electron Microscopy of Zn Diffusion Induced Disordering of GaAlAs-GaAs Multiquantum-Well Structures
Reply to "Comment on 'Intracenter Transition in EL2 Observed in Photocurrent Spectrum'"
Three Midgap Levels in LEC n-GaAs Determined by DLTS Using Au and Al Schottky Barrier Diodes
Photo-Electron Paramagnetic Resonance Study of As_ Antisite Defect in As-Grown GaAs Crystals of Different Stoichiometry
Intracenter Transition in EL2 Observed in Photocurrent Spectrum
Distinction between Midgap Levels in LEC n-GaAs Determined by DLTS and Optical Absorption at 1.1 μm

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