Terashima K | Nec Corp. Kanagawa Jpn
スポンサーリンク
概要
関連著者
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Terashima K
Nec Corp. Kanagawa Jpn
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TERASHIMA Kazutaka
Optoelectronics Joint Research Laboratory
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Fukuda Tsuguo
Optoelectronics Joint Research Laboratory
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Katsumata T
Department Of Applied Chemistry Toyo University
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ORITO Fumio
Optoelectronics Joint Research Laboratory
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TERASHIMA Kazutaka
Kimura Metamelt Project, ERATO, JRDC, Tsukuba Research Consortium
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Tajima M
Inst. Space And Astronautical Sci. Sagamihara Jpn
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Tajima Michio
Optoelectronics Joint Research Laboratory
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Tajima Michio
Institute Of Space And Astronautical Scienc
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Ishida Koichi
Optoelectronics Joint Research Laboratory:(present Address) Fundamental Research Laboratories Nec Co
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Ishida Koichi
Optoelectronics Joint Research Laboratory
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NAKAJIMA Masato
Optoelectronics Joint Research Laboratory
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Nakajima M
Optoelectronics Joint Research Laboratory
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Nakajima M
Toshiba Corp. Kawasaki
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Nakajima M
Mitsubishi Electric Corp. Amagasaki
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Emori Haruo
Optoelectronics Joint Research Laboratory
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Matsumura T
Department Of Electronic Engineering Faculty Of Engineering Gunma University
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MATSUMURA Takao
Optoelectronics Joint Research Laboratory
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KATSUMATA Tooru
Optoelectronics Joint-Research Laboratory
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Miyoshi K
Ulsi Device Development Laboratory Nec Corporation
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TERASHIMA Koichi
ULSI Device Development Laboratory, NEC Corporation
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MIYOSHI Kousuke
ULSI Device Development Laboratory, NEC Corporation
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Terashima Kazutaka
Kimura Metamelt Project Erato Jrdc Tsukuba Research Consortium
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Tajima Michio
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo:(present Address) El
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石田 謙司
神戸大学 大学院工学研究科
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Terashima Koichi
Ulsi Device Development Laboratory Nec Corporation
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KATSUMATA Tooru
Optoelectronics Joint Research Laboratory
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UEDONO Akira
Department of Industrial Chemistry, The University of Tokyo
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TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
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Uedono A
Univ. Tsukuba Tsukuba Jpn
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KIMURA Shigeyuki
Kimura Metamelt Project, ERATO, JRDC, Tsukuba Research Consortium
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IKARI Atsushi
Kimura Metamelt Project, ERATO, JRDC
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TOKIZAKI Eiji
Kimura Metamelt Project, ERATO, JRDC
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Ikari A
Wacker Nsce Corp. Yamaguchi Jpn
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Ikari Atsushi
Kimura Metamelt Project Erato Jrdc:(present Address) Advanced Technology Research Laboratories Nippo
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Ikari Atsushi
R&d Group Wacker Nsce Corporation
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Kimura Shingo
Department Of Physics School Of General Education Iwate Medical University
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Kimura S
Ntt Photonics Lab. Kanagawa Jpn
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Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
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Uedono Akira
Department Of Industrial Chemistry Faculty Of Engineering University Of Tokyo
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OBOKATA Takeshi
Optoelectronics Joint Research Laboratory
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Ikari A
R&d Group Wacker Nsce Corporation
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KIKUTA Toshio
Optoelectronics Joint Research Laboratory
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Sato Takashi
Optoelectronics Joint Research Laboratory
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Ozawa Shoichi
Optoelectronics Joint Research Laboratory
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KATSUMATA Tohru
Optoelectronics Joint Research Laboratory
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TERASHIMA Kazutaka
湘南工科大学工学部材料工学科
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KIMURA Shigeyuki
木村融液動態プロジェクト
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Tokizaki Eiji
Kimura Metamelt Project Erato Jrdc Tsukuba Research Consortium
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MATSUO Syuitsu
Toshiba Ceramics Co., Ltd.
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Matsuo Syuitsu
Toshiba Ceramics Co. Ltd.
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Kimura Shigeyuki
Kimura Metamelt Project
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OBOKATA Takeshi
Optoelectronics Joint-Research Laboratory
著作論文
- Study of Point Defects in Bulk ZnSe Grown by Nonstoichiometric Annealing
- Effect of Melt Stoichiometry on Electrical Activation Uniformity of Si-Implanted Layers in Undoped Semi-Insulating GaAs
- Striations in Undoped Semi-Insulating LEC GaAs
- Improved Uniformity of Resistivity Distribution in LEC Semi-Insulating GaAs Produced by Annealing
- Resistivity, Hall Mobility and Leakage Current Variations in Undoped Semi-Insulating GaAs Crystal Grown by LEC Method
- In Situ Observation of Etching Processes of Silica Glasses by Silicon Melts
- Effect of Magnetic Field on Residual Impurity Concentration in LEC GaAs Single Crystal
- Vertical Magnetic Field Applied LEC Apparatus for Large Diameter GaAs Single Crystal Growth
- Photoluminescence of Low-Energy B^+-Implanted Silicon under Ultraviolet Light Excitation
- Photoluminescence of Low-Energy B± Implanted Silicon under Ultraviolet Light Excitation