Ikari A | R&d Group Wacker Nsce Corporation

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著作論文

Temperature Dependence of the Electrical Resistivity of Molten Silicon
Defects in Czochralski-Grown Silicon Crystals Investigated by Positron Annihilation
Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate (II) : Suppression of the Crystal Defects in Epitaxial Layer by the Control of Crystal Growth Condition and Carbon Co-doping
Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate (I) : Investigation of the Crystallographic Structure
In Situ Observation of Etching Processes of Silica Glasses by Silicon Melts
Oxygen Clusters in Quenched Czochralski-Si Studied by Infrared Spectroscopy and Positron Annihilation

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