Uedono Akira | Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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概要
- Uedono Akiraの詳細を見る
- 同名の論文著者
- Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japanの論文著者
関連著者
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UEDONO Akira
Institute of Materials Science, University of Tsukuba
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Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
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Uedono Akira
Institute Of Applied Physics University Of Tsukuba
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TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
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Uedono A
Univ. Tsukuba Tsukuba Jpn
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MIKADO Tomohisa
Electrotechnical Laboratory
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MIKADO Tomohisa
National Institute of Advanced Industrial Science and Technology (AIST)
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Moriya Tsuyoshi
Institute Of Material Science University Of Tsukuba
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Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
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Mikado Tomohisa
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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Kawano Takao
Radioisotope Center University Of Tsukuba
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Suzuki R
National Institute Of Advanced Industrial Science And Technology
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Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology
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Ohshima Takeshi
Japan Atomic Energy Research Institute (jaeri)
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Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology (aist)
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SUZUKI Ryoichi
Electrotechnical Laboratory
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Kawano T
Osaka Univ. Osaka Jpn
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Ohdaira Toshiyuki
Department Of Nuclear Engineering Kyoto University
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KAWANO Takao
Radioisotope Center,University of Tsukuba
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OHDAIRA Toshiyuki
Electrotechnical Laboratory
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Kitano T
Tokyo Electron Kyushu Ltd. Kumamoto Jpn
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Kawano T
Tokyo Electron Kyushu Ltd. Kumamoto Jpn
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Kitano T
Fundamental Research Laboratories Nec Corporation
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WEI Long
Institute of Materials Science, University of Tsukuba
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Wei Long
Institute Of Materials Science University Of Tsukuba
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Moriya T
Institute Of Material Science University Of Tsukuba
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MORIYA Tsuyoshi
Institute of Materials Science, University of Tsukuba
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Wei L
Institute Of Materials Science University Of Tsukuba
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伊藤 晴雄
千葉工業大学
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Kametani Hitoshi
General Research Laboratory Mitubishi Electric Corporation
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ITOH Hisayoshi
Japan Atomic Energy Research Institute
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Ohdaira Toshiyuki
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Itoh H
Japan Atomic Energy Research Institute Takasaki Radiation Chemistry Research Establishment
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Itoh Hisayoshi
Japan Atomic Energy Agency
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OHSHIMA Takeshi
Japan Atomic Energy Research Institute
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IKARI Atsushi
Electronics R & D Laboratories, Nippon Steel Corporation
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Ikari A
Wacker Nsce Corp. Yamaguchi Jpn
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Ikari Atsushi
Kimura Metamelt Project Erato Jrdc:(present Address) Advanced Technology Research Laboratories Nippo
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Ikari Atsushi
R&d Group Wacker Nsce Corporation
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Kitano Tomohisa
Ulsi Device Development Laboratories Nec Corporation
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Ebe Hiroji
Nanoelectronics Collaborative Research Center (ncrc) Institute Of Industrial Science (iis) The Unive
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Ebe Hiroji
Fujitsu Laboratories Ltd.
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KONDO Hitoshi
Institute of Materials Science,University of Tsukuba
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Ebe H
Univ. Tokyo Tokyo Jpn
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Aoki Yasushi
Japan Atomic Energy Research Institute
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Aoki Y
Department Of Materials Development Japan Atomic Energy Research Institute
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Sugiura Jun
Device Development Center Hitachi Ltd.
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Aoki Yuji
Superconductivity Research Laboratory Istec
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Miyamoto Yoshihiro
Fujitsu Laboratories Ltd.
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Miyamoto Y
Kyushu Univ. Fukuoka Jpn
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和田 健司
大阪府立大学 大学院工学研究科
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Wada K
Osaka Prefecture University
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Wada Kazumi
NTT LSI Laboratories
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Yamamoto K
Univ. Of Tsukuba
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Ogasawara Makoto
Device Development Center Hitachi Ltd.
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NAKANISHI Hideo
NTT LSI Laboratories
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YOSHIKAWA Masahito
Japan Atomic Energy Research Institute, Takasaki Radiation Chemistry Research Establishment
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NASHIYAMA Isamu
Japan Atomic Energy Research Institute
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YAMAMOTO Kosaku
Fujitsu Laboratory Ltd.
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Yoshida Sadafumi
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita
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Yoshikawa Masahito
Japan Atomic Energy Research Institute (jaeri)
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Yoshikawa Masahito
Japan Atomic Energy Research Institute
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WATANABE Masahito
ULSI Device Development Laboratories, NEC Corporation
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ISHIBASHI Shoji
Electrotechnical Laboratory
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Yamamoto K
Kaneka Corporation
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Aoki Y
Advanced Technology Research Center Kanagawa Institute Of Technology
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FUJII Satoshi
Itami Research Laboratories. Sumitomo Electric Industries, Ltd.
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Kondo H
The Institute Of Scientific And Industrial Research Osaka University
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Ogasawara M
Hitachi Ltd. Tokyo Jpn
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DOSHO Chisei
Institute of Materials Science, University of Tsukuba
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SUGIURA Jun
Device Development Center, Hitachi Ltd.
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OGASAWARA Makoto
Device Development Center, Hitachi Ltd.
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Tanaka M
Production Engineering Research Laboratory Hitachi Ltd.
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Tanaka M
Mitsubishi Electric Co. Ltd. Hyogo Jpn
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Chen Zhi
Institute Of Applied Physics University Of Tsukuba
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Shouguchi Junko
Department Of Life Science Faculty Of Bioscience And Biotechnology Tokyo Institute Of Technology
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Ohgaki H
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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Tanaka Michiko
Tokyo University Of Agiculture And Technology Department Of Biotechnology
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Dosho Chisei
Institute Of Materials Science University Of Tsukuba
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Tanaka M
New Materials Research Center Sanyo Electric Co. Ltd.
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Kondo Hideyuki
Central Research Institute Mitsubishi Materials Corporation
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Fujii Syuitsu
Adtec Co. Ltd.
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OKUMURA Hajime
Electrotechnical Laboratory (ETL)
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Okumura H
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Okumura H
Electrotechnical Lab. Ibaraki Jpn
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Okumura Hajime
Electrotechnical Laboratory
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Tanaka M
Manufacturing Development Center Mitsubishi Electric Corporation
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YOSHIDA Sadafumi
Electrotechnical Laboratory
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KAWAKAMI Kazuto
Electronics R & D Laboratories, Nippon Steel Corporation
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Tanaka M
Toshiba Corp. Kawasaki Jpn
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TANAKA Masahiro
Fujitsu Laboratory Ltd.
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Tachibana Masaru
Department Of Physics Yokohama City University
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Hattori Nobuyoshi
Process Technology Development Division Renesas Technology Corp.
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Fujii Sadao
Central Research Laboratory Kanegafuchi Chemical Industry Co.
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Fujii S
Matsushita Electronics Corp. Kyoto Jpn
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Tanaka M
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Ogasawara M
Pioneer Corp. Saitama Jpn
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Ikari A
R&d Group Wacker Nsce Corporation
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Kojima Kenzo
Department Of Electrical Engineering Aichi Institute Of Technology
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SATOH Masaaki
Department of Clinical Pathology, School of Medicine, Sapporo Medical University
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Yamazaki Tetsuo
Elecltrotechnical Laboratory:(present Address) Institute Of Advanced Energy Kyoto University
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Watanabe Akira
Department of Biological Sciences, Graduate School of Science, University of Tokyo
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FUNAMOTO Hiroyuki
Seiko Instruments & Electronics Ltd.
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NISHIKAWA Akira
Seiko Instruments & Electronics Ltd.
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Funamoto Hiroyuki
Seiko Instruments Inc.
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OHGAKI Hideaki
Electrotechnical Laboratory
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TAKAHASHI Kouji
Seiko Instruments Inc.
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Kojima Kenzo
Department Of Electronic Engineering Faculty Of Engineering Aichi Institute Of Technology
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Yoshikawa M
Department Of Electronics University Of Osaka Prefecture
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Cho Yang-koo
Institute Of Materials Science University Of Tsukuba:(present Address)korea Standards Institute
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Cho Yang
Korea Research Institute Of Standards And Science
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Cho Yang-koo
Institute Of Materials Science University Of Tsukuba:(present Address)korea Research Institute)
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Imoto Hideo
Department Of Material And Environmental Chemistry Graduate School Of Engineering Utsunomiya Univers
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Imoto Hideo
Department Of Applied Chemistry Faculty Of Engineering Utsunomiya University
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Watanabe M
Hiroshima Univ. Higashi‐hiroshima Jpn
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SUZUKI Ryoichi
Elecltrotechnical Laboratory
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OHDAIRA Toshiyuki
Elecltrotechnical Laboratory
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YOSHIDA Sadafumi
Elecltrotechnical Laboratory
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ISHIDA Yuuki
Elecltrotechnical Laboratory
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CHIWAKI Mitsukuni
Elecltrotechnical Laboratory
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MIKADO Tomohisa
Elecltrotechnical Laboratory
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Chen Z
Univ. Tsukuba Ibaraki Jpn
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Kuroda Kenji
Faculty Of Engineering The University Of Tokushima
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Kawai M
Kawasaki Heavy Industries Ltd.
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Uedono Akira
Institute Of Materials Science University Of Tsukuba:(present Address) Department Of Physics Yokoham
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Uedono Akira
Institute Of Materials Science University Of Tsukuba:(present Address)department Of Physics Yokohama
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Ishida Y
Kitakyushu Foundation For The Advancement Of Ind. Sci. And Technol. Kitakyushu Jpn
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Ikari Atsushi
Advanced Technology Research Laboratories Nippon Steel Corporation
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Ohgaki Hideaki
Institute Of Advanced Energy Kyoto University
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Ohgaki Hideaki
National Institute Of Advanced Industrial Science And Technology
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Kojima Kenichi
Graduate School Of Integrated Science Yokohama City University
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Kojima Kenichi
Department Of Physics Yokohama City University
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Kojima Kenichi
Department Of Physics Faculty Of Sciences Tohoku University:faculty Of Integrated Arts And Sciences
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Kaneko Hisashi
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Tezuka Keitaro
Department of Material and Environmental Chemistry, Graduate School of Engineering, Utsunomiya Unive
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Shan Yue
Department of Material and Environmental Chemistry, Graduate School of Engineering, Utsunomiya Unive
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AKIYAMA Hajime
LSI Research and Development Laboratory, Mitubishi Electric Corporation
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YAMAGUCHI Yasuo
General Research Laboratory, Mitubishi Electric Corporation
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KOUMARU Masaki
LSI Research and Development Laboratory, Mitubishi Electric Corporation
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森 竜雄
Nagoya Univ. Aichi Jpn
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Nishikawa A
Teikyo Univ. Utsunomiya
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NANAO Susumu
Institute of Industrial Sciences, The University of Tokyo
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KAWAKAMI Kazuto
Advanced Technology Research Laboratories, Nippon Steel Corporation
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YAMABE Kikuo
Institute of Applied Physics, University of Tsukuba
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NISHIKAWA Satoshi
Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.
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Watanabe Mahiko
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
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Kojima K
Department Of Electronic Engineering Faculty Of Engineering Aichi Institute Of Technology
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Yoda Osamu
Takasaki Radiation Chemistry Research Establishment Japan Atomic Energy Research Institute
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Wada K
Hokkaido Univ. Sapporo Jpn
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Kuroda K
Central Research Laboratory Hitachi Ltd.
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SUGIYAMA Mutsumi
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba
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NOSAKA Taiki
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba
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SUZUKI Tomonori
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba
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KOIDA Takashi
NICP, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency (JST
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NAKAJIMA Kiyomi
COMET-NIMS, National Institute for Materials Science
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Kudo Jun
Semiconductor Technology Academic Research Center
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HATTORI Nobuyoshi
Semiconductor Technology Academic Research Center
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OGURA Atsushi
Semiconductor Technology Academic Research Center
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ARIKADO Tsunetoshi
Semiconductor Leading Edge Technologies Inc.
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TAMURA Masao
Central Research Laboratory, Hitachi, Ltd.
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Ogura Atsushi
Silicon Systems Research Laboratories Nec Corporation
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MITSUHASHI Riichiro
Semiconductor Leading Edge Technologies, Inc.
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TABUKI Yasushi
Institute of Materials Science, University of Tsukuba
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Tabuki Yasushi
Institute Of Materials Science University Of Tsukuba
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Suzuki Takenori
Radiation Science Center High Energy Accelerator Research Organization (kek)
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ITOH Hisayoshi
Takasaki Radiation Chemistry Research Establishment, Japan Atomic Energy Research Institute
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SHIKATA Shinichi
Itami Research Laboratories, Sumitomo Electric Industries, Ltd.
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MIYAGAWA Yoshihiro
Process Technology Development Division, Renesas Technology Corp.
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MURATA Tatsunori
Process Technology Development Division, Renesas Technology Corp.
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NISHIDA Yukio
Process Technology Development Division, Renesas Technology Corp.
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NAKAI Takehiro
Process Technology Development Division, Renesas Technology Corp.
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HATTORI Nobuyoshi
Process Technology Development Division, Renesas Technology Corp.
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MATSUURA Masazumi
Process Technology Development Division, Renesas Technology Corp.
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ASAI Koyu
Process Technology Development Division, Renesas Technology Corp.
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YONEDA Masahiro
Process Technology Development Division, Renesas Technology Corp.
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OZAKI Kazuo
Fujitsu Laboratories, Ltd.
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WATANABE Tomoko
Department of Applied Chemistry, Faculty of Engineering, Utsunomiya University
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Ishiwara Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Kojima Kazuyoshi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Yoshikawa Masaaki
Imra Material R & D Co Ltd.
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Tanigawa Shoichiro
Institute Of Materials Science University Of Tsukuba
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HAMADA Kouji
ULSI Device Development Laboratories, NEC Corporation
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KOMURO Naoyuki
Institute of Materials Science, University of Tsukuba
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NAGAI Ryo
Semiconductor & Integrated Circuits Div., Hitachi, Ltd.
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UMEDA Kazunori
Central Research Laboratory, Hitachi, Ltd.
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MURAMATSU Makoto
Institute of Applied Physics, University of Tsukuba
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UBUKATA Tomohiro
Institute of Applied Physics, University of Tsukuba
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TANINO Hirotoshi
Institute of Applied Physics, University of Tsukuba
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NAKANO Akihiko
Semiconductor Technology Academic Research Center
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YAMAMOTO Hidekazu
Semiconductor Technology Academic Research Center
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MIKADO Tomohisa
Semiconductor Technology Academic Research Center
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SUZUKI Ryoichi
Institute of Materials Science, University of Tsukuba
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MIKADO Tomohisa
Institute of Materials Science, University of Tsukuba
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MURAMATSU Makoto
National Institute of Advanced Industrial Science and Technology (AIST)
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Ito Y
Nihon Univ. Tokyo Jpn
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Nishikawa Satoshi
Semiconductor Technology Academic Research Center
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Nishikawa Satoshi
Semiconductor Tech. Lab. Oki Electric Industry Co. Ltd.
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Mori K
Institute Of Material Science University Of Tsukuba
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Akiyama H
Institute For Solid State Physics University Of Tokyo
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Yamaguchi Y
Fuji Xerox Co. Ltd. Kanagawa Jpn
著作論文
- Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow Positrons
- Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam
- Vacancy-Type Defects in As^+-Implanted SiO_2(43 nm)/Si Proved with Slow Positrons
- Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
- Positron Annihilation in Proton Irradiated Czochralski-Grown Si
- Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
- Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
- Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
- Effects of the Fermi Level on Defects in Be^+-Implanted GaAs Studied by a Monoenergetic Positron Beam
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- Oxygen Microclusters in Czochralski-Grown Si Probed by Positron Annihilation
- Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
- Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
- Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
- A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
- Reversible Photodissociation of Hexacarbonyl Tungsten in Cross-Linked Polymers
- Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Formation of Oxygen-Related Defects Enhanced by Fluorine in BF^+_2-Implanted Si Studied by a Monoenergetic Positron Beam
- Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
- Oxygen-Related Defects Introduced by As^+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
- Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
- Defects in TiN Films Probed by Monoenergetic Positron Beams
- Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
- Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beams
- Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
- Defects in Czochralski-Grown Silicon Crystals Investigated by Positron Annihilation
- Defects Introduced by Ar Plasma Exposure in GaAs Probed by Monoenergetic Positron Beam
- Compatibilization of Metallocene Polyethylene/Polyamide Blends with Maleic Anhydride Studied by Positron Annihilation
- Vacancy-Type Defects in Be-Implanted InP
- Free Volume in Polycarbonate Studied by Positron Annihilation : Effects of Free Radicals and Trapped Electrons on Positronium Formation : Structure and Mechanical and Thermal Properties of Condensed Matter
- Evaluation of SOI Substrates by Positron Annihilation
- Oxygen Clusters in Quenched Czochralski-Si Studied by Infrared Spectroscopy and Positron Annihilation
- Structure-modification model of porogen-based porous SiOC film with ultraviolet curing (Special issue: Advanced metallization for ULSI applications)
- Defects Induced by Wafer Processing and Thermal Treatment in InP Probed with Monoenergetic Positrons
- Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs
- Homoepitaxial Growth of SrTiO_3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370℃ : Surfaces, Interfaces, and Films
- Defects in SiO_2 /Si Structures Probed by Using a Monoenergetic Positron Beam
- Slow Positron Beam Apparatus for Surface and Subsurface Analysis of Samples in Air
- Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
- Variation of Chemical Vapor Deposited SiO Density Due to Generation and Shrinkage of Open Space During Thermal Annealing
- Study of Interactions of Hf and SiO2 Film for High-$k$ Materials
- Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices
- Impact of Residual Impurities on Annealing Properties of Vacancies in Electroplated Cu Studied Using Monoenergetic Positron Beams
- Positron Annihilation Study on Defects in HfSiON Films Deposited by Electron-Beam Evaporation
- Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam
- Characterization of Low-$k$/Cu Damascene Structures Using Monoenergetic Positron Beams
- Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
- Defects in Electroplated Cu and Their Impact on Stress Migration Reliability Studied using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF2+-Implanted Si Probed by Monoenergetic Positron Beams
- Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
- Evaluation of SOI Substrates by Positron Annihilation
- A Study of Vacancy-Type Defects in B+-Implanted SiO2/Si by a Slow Positron Beam