Kitano Tomohisa | Ulsi Device Development Laboratories Nec Corporation
スポンサーリンク
概要
関連著者
-
Kitano Tomohisa
Ulsi Device Development Laboratories Nec Corporation
-
Kitano T
Tokyo Electron Kyushu Ltd. Kumamoto Jpn
-
Kawano T
Osaka Univ. Osaka Jpn
-
Kawano T
Tokyo Electron Kyushu Ltd. Kumamoto Jpn
-
Kitano T
Fundamental Research Laboratories Nec Corporation
-
SUZUKI Ryoichi
Electrotechnical Laboratory
-
MIKADO Tomohisa
Electrotechnical Laboratory
-
Kawano Takao
Radioisotope Center University Of Tsukuba
-
OHDAIRA Toshiyuki
Electrotechnical Laboratory
-
Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
-
Moriya Tsuyoshi
Institute Of Material Science University Of Tsukuba
-
Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
-
TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
-
UEDONO Akira
Institute of Materials Science, University of Tsukuba
-
Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology
-
Ohdaira Toshiyuki
Department Of Nuclear Engineering Kyoto University
-
Uedono A
Univ. Tsukuba Tsukuba Jpn
-
Uedono Akira
Institute Of Applied Physics University Of Tsukuba
-
KAWANO Takao
Radioisotope Center,University of Tsukuba
-
Suzuki R
National Institute Of Advanced Industrial Science And Technology
-
Moriya T
Institute Of Material Science University Of Tsukuba
-
Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
-
MIKADO Tomohisa
National Institute of Advanced Industrial Science and Technology (AIST)
-
MORIYA Tsuyoshi
Institute of Materials Science, University of Tsukuba
-
Mikado Tomohisa
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
-
Ohshima Takeshi
Japan Atomic Energy Research Institute (jaeri)
-
Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology (aist)
-
WATANABE Masahito
ULSI Device Development Laboratories, NEC Corporation
-
Moriya T
Tokyo Metropolitan University Graduate School Of Engineering
-
TOYAMA Masaharu
Toshiba Research and Development Center
-
Ohgaki Takeshi
National Inst. For Materials Sci.
-
Tanigawa S
Institute Of Applied Physics University Of Tsukuba
-
Ohshima T
Japan Atomic Energy Res. Inst. Takasaki Jpn
-
Mikado T
Electrotechnical Laboratory
-
Ohgaki T
National Institute For Materials Science (nims)
-
Mikado Tomohisa
Institute Of Materials Science University Of Tsukuba
-
Miura Y
Ntt Lsi Laboratories
-
OGURA Atsushi
Institute of Molecular and Cellular Biosciences, The University of Tokyo
-
Ogura A
Nec Corp. Sagamihara Jpn
-
Ogura A
Nec Corp. Kanagawa Jpn
-
Saito Shuichi
Ulsi Device Development Laboratories Nec Corporation
-
Komuro Naoyuki
Institute Of Materials Science University Of Tsukuba
-
Hamada K
Ulsi Device Development Laboratories Nec Corporation
-
Kitano T
Ulsi Device Development Laboratories Nec Corporation
-
HAMADA Kouichi
ULSI Device Development Laboratories, NEC Corporation
-
Watanabe M
Hiroshima Univ. Higashi‐hiroshima Jpn
-
Watanabe Mahiko
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
-
Ikeda Kazuko
Ulsi Device Development Laboratories Nec Corporation
-
Ogura Atsushi
Silicon Systems Research Laboratories Nec Corporation
-
HAMADA Kouji
ULSI Device Development Laboratories, NEC Corporation
-
KOMURO Naoyuki
Institute of Materials Science, University of Tsukuba
-
Hamada Kouji
Ulsi Device Development Laboratories Nec Corporation
-
Hasegawa Eiji
Ulsi Device Development Division Nec Corporation
-
Miura Yoshinao
Silicon Systems Research Laboratories System Devices And Fundamental Research Nec Corporation
-
Akimoto Koichi
Microelectronics Research Laboratories Nec Corporation
-
MIURA Yoshinao
Microelectronics Research Laboratories, NEC Corporation
-
OGURA Atsushi
Microelectronics Research Laboratories, NEC Corporation
-
TSUKIJI Masaru
ULSI Device Development Laboratories, NEC Corporation
-
KIMURA Shigeru
Microelectronics Research Laboratories, NEC Corporation
-
Ogura Atsushi
Silicon Systems Research Laboratories Nec Corp.
-
Ogura Atsushi
Microelectronics Research Laboratories Nec Corporation
-
Kodama Noriyuki
Ulsi Device Development Laboratories Nec Corporation
-
Kimura Shigeru
Microelectronics Research Laboratories Nec Corporation
-
SAITO Shuichi
ULSI Device Development Laboratories, NEC Corporation
-
Saito Shuichi
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
-
Kitano Tomohisa
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
-
Sakai Tetsuya
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
-
HASEGAWA Eiji
ULSI Device Development Laboratories, NEC Corporation
-
Ogura Atsushi
Silicon System Research Labs., NEC Corp., 1120 Shimokuzawa, Sagamihara 229-1198, Japan
-
IKEDA Kazuko
ULSI Device Development Laboratories, NEC Corporation
-
Kodama Noriyuki
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
-
Ohdaira Toshiyuki
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
-
Mikado Tomohisa
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
著作論文
- Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Evaluation of Electron Trap Levels in SOI Buried Oxides by Transient Photocurrent Spectroscopy
- Evaluation of Electron Trap Levels in SIMOX Buried Oxide by Transient Photocurrent Spectroscopy
- Silicon Surface Imperfection Probed with a Novel X-Ray Diffraction Technique and Its Influence on the Reliability of Thermally Grown Silicon Oxide
- Suppression of Titanium Disilicide Formation on Heavily Arsenic-Doped Silicon Substrate
- Fluorine-Related Defects in BF2+-Implanted Si Probed by Monoenergetic Positron Beams