Suppression of Titanium Disilicide Formation on Heavily Arsenic-Doped Silicon Substrate
スポンサーリンク
概要
- 論文の詳細を見る
Titanium disilicide formation on heavily arsenic-doped silicon substrate was investigated. The suppression of disilicide formation was due to the existence of an incubation time, but not to the reduction of the disilicide formation rate. The incubation time for disilicide formation was induced when the amount of arsenic was above a critical concentration (5×1020 atoms/cm3) at the silicon surface. Arsenic concentration higher than the critical value induced the retardation of transformation from the titanium-rich silicides to the disilicide. When the arsenic concentration was lower than the critical value, the disilicide formation occurred without an incubation time.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-15
著者
-
Kitano Tomohisa
Ulsi Device Development Laboratories Nec Corporation
-
Saito Shuichi
Ulsi Device Development Laboratories Nec Corporation
-
Kodama Noriyuki
Ulsi Device Development Laboratories Nec Corporation
-
Saito Shuichi
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
-
Kitano Tomohisa
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
-
Sakai Tetsuya
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
-
Kodama Noriyuki
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
関連論文
- Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Evaluation of Electron Trap Levels in SOI Buried Oxides by Transient Photocurrent Spectroscopy
- Evaluation of Electron Trap Levels in SIMOX Buried Oxide by Transient Photocurrent Spectroscopy
- Silicon Surface Imperfection Probed with a Novel X-Ray Diffraction Technique and Its Influence on the Reliability of Thermally Grown Silicon Oxide
- Lateral Diffusion Distance Measurement of 40-80 nm Junctions by Etching/TEM-Electron Energy Loss Spectroscopy Method
- Suppression of Titanium Disilicide Formation on Heavily Arsenic-Doped Silicon Substrate
- Fluorine-Related Defects in BF2+-Implanted Si Probed by Monoenergetic Positron Beams