Evaluation of Electron Trap Levels in SOI Buried Oxides by Transient Photocurrent Spectroscopy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-03-30
著者
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Kitano T
Tokyo Electron Kyushu Ltd. Kumamoto Jpn
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Miura Y
Ntt Lsi Laboratories
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Kawano T
Osaka Univ. Osaka Jpn
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OGURA Atsushi
Institute of Molecular and Cellular Biosciences, The University of Tokyo
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Ogura A
Nec Corp. Sagamihara Jpn
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Ogura A
Nec Corp. Kanagawa Jpn
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Ogura Atsushi
Silicon Systems Research Laboratories Nec Corporation
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Kawano T
Tokyo Electron Kyushu Ltd. Kumamoto Jpn
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Kitano T
Fundamental Research Laboratories Nec Corporation
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Kitano Tomohisa
Ulsi Device Development Laboratories Nec Corporation
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Miura Yoshinao
Silicon Systems Research Laboratories System Devices And Fundamental Research Nec Corporation
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Hamada K
Ulsi Device Development Laboratories Nec Corporation
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Kitano T
Ulsi Device Development Laboratories Nec Corporation
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HAMADA Kouichi
ULSI Device Development Laboratories, NEC Corporation
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Ogura Atsushi
Silicon Systems Research Laboratories Nec Corp.
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Ogura Atsushi
Silicon System Research Labs., NEC Corp., 1120 Shimokuzawa, Sagamihara 229-1198, Japan
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