Spin-Dependent Trap-Assisted Tunneling Current in Ultra-Thin Gate Dielectrics

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概要

• 論文の詳細を見る
• 2000-08-28

著者

• Miura Yoshinao

  Silicon Systems Research Laboratories System Devices And Fundamental Research Nec Corporation

• Fujieda Shinji

  Silicon Systems Research Laboratories System Devices And Fundamental Research Nec Corporation

• Fujieda Shinji

  Silicon Systems Research Laboratories Nec Corporation

関連論文

• Mechanism of Leakage Current Reduction by Adding WO_3 to Crystallized Ta_2O_5 : Structure and Mechanical and Thermal Properties of Condensed Matter
• Paramagnetic Defects Related to Positive Charges in Silicon Oxynitride Films
• Spin-Dependent Trap-Assisted Tunneling Current in Ultra-Thin Gate Dielectrics
• Evaluation of Electron Trap Levels in SOI Buried Oxides by Transient Photocurrent Spectroscopy
• Spin-Dependent Trap-Assisted Tunneling Current in Ultra-Thin Gate Dielectrics

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