Spin-Dependent Trap-Assisted Tunneling Current in Ultra-Thin Gate Dielectrics

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概要

• 論文の詳細を見る

• We have characterized the leakage current paths of ultra-thin gate dielectrics using spin-dependent tunneling (SDT) spectroscopy. A spin-dependent current was detected in metal-oxide-semiconductor diodes with chemical-vapor-deposition SiN gate films with thickness less than 3 nm. We examined the nature of the trap sites in terms of $g$-value, bias-dependent signal intensity, and magnetic-field orientation dependence. The main feature of the observed spectrum is attributed to a paramagnetic Si site in the SiN films. By using a quantitative model of electron spin-polarization, we were able to estimate the ratio of trap-assisted current to the total leakage current.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-04-30

著者

• Miura Yoshinao

  Silicon Systems Research Laboratories System Devices And Fundamental Research Nec Corporation

• Fujieda Shinji

  Silicon Systems Research Laboratories Nec Corporation

• Fujieda Shinji

  Silicon Systems Research Laboratories, System Devices and Fundamental Research, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan

• Miura Yoshinao

  Silicon Systems Research Laboratories, System Devices and Fundamental Research, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan

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