Paramagnetic Defects Related to Positive Charges in Silicon Oxynitride Films
スポンサーリンク
概要
- 論文の詳細を見る
- 2000-10-01
著者
-
Hasegawa Eiji
Ulsi Device Development Division Nec Corporation
-
Miura Yoshinao
Silicon Systems Research Laboratories System Devices And Fundamental Research Nec Corporation
-
Fujieda Shinji
Silicon Systems Research Laboratories Nec Corporation
-
Fujieda Shinji
Silicon Systems Research Laboratories, System Devices and Fundamental Research, NEC Corporation
-
Miura Yoshinao
Silicon Systems Research Laboratories, System Devices and Fundamental Research, NEC Corporation
関連論文
- Mechanism of Leakage Current Reduction by Adding WO_3 to Crystallized Ta_2O_5 : Structure and Mechanical and Thermal Properties of Condensed Matter
- Paramagnetic Defects Related to Positive Charges in Silicon Oxynitride Films
- Spin-Dependent Trap-Assisted Tunneling Current in Ultra-Thin Gate Dielectrics
- Evaluation of Electron Trap Levels in SOI Buried Oxides by Transient Photocurrent Spectroscopy
- Silicon Surface Imperfection Probed with a Novel X-Ray Diffraction Technique and Its Influence on the Reliability of Thermally Grown Silicon Oxide
- Spin-Dependent Trap-Assisted Tunneling Current in Ultra-Thin Gate Dielectrics