Generation of Slip Dislocations during Czochralski Growth of Semiconductor Crystals Pullen in a <111> Axis
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1986-09-20
著者
-
Kitano T
Tokyo Electron Kyushu Ltd. Kumamoto Jpn
-
Matsui Junji
Fundamental Research Laboratories, NEC Corporation
-
KITANO Tomohisa
Fundamental Research Laboratories, NEC Corporation
-
Kitano T
Fundamental Research Laboratories Nec Corporation
-
Kitano Tomohisa
Fundamental Reseach Laboratories Nec Corporation
-
ONO Haruhiko
Fundamental Research Laboratories, NEC Corporation
-
Ono Haruhiko
Fundamental Research Laboratories Nec Corporation
-
Matsui J
Himeji Inst. Technol. Hyogo Jpn
-
Matsui Junji
Fundamental Research Laboratories Nec Corporation
-
Kitano T
Ulsi Device Development Laboratories Nec Corporation
-
水木 純一郎
原子力機構量子ビーム
関連論文
- 20aGL-4 Pd金属微粒子のCO/NO触媒反応中における動的な形態・構造・酸化状態変化(20aGL 微粒子・クラスター/若手奨励賞,領域9(表面・界面,結晶成長))
- 29aXJ-2 アモルファスチタン酸ビスマスの構造解析
- 27aYR-5 CdTe-ZnTe半導体混晶の高エネルギーX線回折 II
- 22aX-6 CdTe-ZnTe半導体混晶の高エネルギーX線回折
- 28pYH-9 その場実時間分割XAFS測定によるCO/NO雰囲気下Pd金属微粒子の動的構造及び形状変化(微粒子・クラスター,領域9,表面・界面,結晶成長)
- 表面硬化層を有する低炭素316ステンレス鋼の高温水中でのSCC挙動
- 1410 高硬質(Ti,B)N薄膜構造の放射光解析(G04-1 機械材料・材料加工(1),21世紀地球環境革命の機械工学:人・マイクロナノ・エネルギー・環境)
- 24aPS-36 R_Ca_MnO_3の磁性と誘電性(R:希土類)(24aPS ポスターセッション(低温),領域8(強相関係:高温超伝導,強相関f電子系など))
- 20pRB-14 巨大負熱膨張物質Mn_3(Cu,Ge)NにおけるGe不純物の局所構造(20pRB 遍歴磁性,領域3(磁性,磁気共鳴))
- 19pWF-9 STM/STSによるSr_3(Ru,Mn)_2O_7の局所電子状態観察 II(19pWF Ru系,領域8(強相関系:高温超伝導,強相関f電子系など))
- 27aYA-11 量子常誘電体KTaO_3のX線照射効果(27aYA 領域10,領域5合同 誘電体,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
- SPring-8の材料研究の現状と展望 (特集 放射線プロセスシンポジウム)
- Atmospheric Rust Formation Process on Fe-Cr and Fe-Ni Alloys under Wet/Dry Cycles Observed by Synchrotron Radiation X-ray Diffraction
- Structure Analysis of Cation Selective Cr-goethite as Protective Rust of Weathering Steel
- Characterization of Rust Layer Formed on Fe, Fe-Ni and Fe-Cr Alloys Exposed to Cl-Rich Environment by Cl and Fe K-Edge XANES Measurements
- Difference between Cr and Ni K-edge XANES Spectra of Rust Layers Formed on Fe-Based Binary Alloys Exposed to Cl-Rich Environment
- Cl K-Edge XANES Spectra of Atmospheric Rust on Fe, Fe-Cr and Fe-Ni Alloys Exposed to Saline Environment
- 放射光を用いた鉄鋼腐食研究
- 27aYE-1 永遠の命を持つ自動車排ガス触媒の正体(表面界面ダイナミクス(分子))(領域9)
- 放射光による鉄鋼の大気腐食研究
- 貴金属が自己再生する自動車排ガス浄化触媒
- 22aXC-8 KTaO_3 の量子常誘電状態における X 線照射効果
- 22aYD-3 表面 X 線回折法による GaAs(001)-c(4x4) 構造の解析
- 28p-PS-77 YBa_2Cu_3O_薄膜の偏光EXAFSの温度変化
- 17pTF-5 GaAs(001)-(2×4)β2表面のAs吸着による構造変化
- 原研ビームライン(BL-14B1)における構造物性研究
- 結晶構造と自動車排ガス触媒機能との相関 : X線異常分散効果の利用
- Pick Up 次世代自動車排ガス触媒--インテリジェント機能とその構造
- 20aWK-11 銅酸化物超伝導体La_Sr_xCuO_4のNi不純物サイトにおけるホール局在(20aWK 高温超伝導(μSR,中性子散乱,NMR),領域8(強相関系:高温超伝導,強相関f電子系など))
- 28pYR-6 酸化還元雰囲気中でのPdペロブスカイト触媒の結晶構造 II
- 30pYM-3 DAFSによるCa_Cu_O_薄膜のladder site局所構造解析
- 27aYJ-8 CaFeO_3単結晶薄膜における電荷不均化
- 23pYQ-8 酸化還元雰囲気中でのPdペロブスカイト触媒の結晶構造
- Nanostructure of Protective Rust Layer on Weathering Steel Examined Using Synchrotron Radiation X-rays
- Control of the Electrical Properties of AlN/thin-a-Si/GaAs MIS Diodes by GaAs Surface Pretreatments
- Effects of InP Surface Treatment on the Electrical Properties and Structures of AlN/n-InP Interface
- Interfacial Superstructure of AIN/n-GaAs(001) System Fabricated by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces and Films
- X-Ray Standing Wave Method Applied to the Characterization of InGaAsP Alloy Semiconductor Thin Film
- 24pWS-8 X線吸収分光で見るPd金属微粒子の水素吸蔵ダイナミクス(24pWS 表面ダイナミクス・水素,ダイナミクス,領域9(表面・界面,結晶成長))
- Fluorescence EXAFS Study of Zn-Doped LEC InP Crystal : Condensed Matter
- 霧化型励起酸素発生器の基礎研究
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- Synchrotron Plane Wave X-Ray Topography of 6 inch Diameter Si Crystal
- Generation Rule of the Slip Dislocation in LEC GaAs Crystal
- The Effect of Reduction of Dislocation Density on the Lattice Distortions in Undoped GaAs Single Crystal Grown by LEC Method
- Synchrotron Plane Wave X-Ray Topography of GaAs with a Separate (+, +) Monochro-Collimator
- X-Ray Topography Examination of Lattice Distortions in LEC-Grown GaAs Single Crystals
- Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
- Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
- In Situ X-Ray Monitoring of Metalorganic Vapor Phase Epitaxy
- Threading Dislocation Reduction in InP on GaAs by Thin Strained Interlayer and its Application to the Fabrication of 1.3-μm-Wavelength Laser on GaAs
- Improved Self-Aligned Structure for GaAlAs High-Power Lasers
- Waveform Shaping of a Chemical Oxygen-Iodine Laser Utilizing the Zeeman Effect
- 化学酸素沃素レーザーの磁場によるパルス発振
- Study on Zr-Si/W(100) Surface at High Temperatures by Reflection High Energy Electron Diffraction
- 化学酸素沃素レーザの磁場による出力制御
- Study on Zr-Si/W(100) Surface at High Temperatures by Combined Surface Analysis Techniques
- Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
- Defects in Czochralski-Grown Silicon Crystals Investigated by Positron Annihilation
- Defects Introduced by Ar Plasma Exposure in GaAs Probed by Monoenergetic Positron Beam
- Evaluation of Electron Trap Levels in SOI Buried Oxides by Transient Photocurrent Spectroscopy
- Evaluation of Electron Trap Levels in SIMOX Buried Oxide by Transient Photocurrent Spectroscopy
- Generation of Slip Dislocations during Czochralski Growth of Semiconductor Crystals Pullen in a Axis
- Crystallization of Amorphous Silicon with Clean Surfaces
- Structure Characterization of Fe-B Amorphous Alloys by a Laboratory EXAFS Spectrometer
- Fluorescence EXAFS Study of AlGaAs Doped with Se Donor Impurities
- Appropriate Pulling Axis Orientation to Suppress Slip Dislocation Generation during Czochralski Growth of Semiconductor Crystals : Condensed Matter
- Sodium Requirement of Monocotyledonous C_4 Plants for Growth and Nitrate Reductase Activity
- Influence of In Atoms on the Shape of Dislocation Etch Pits in LEC In-Doped GaAs Crystals
- Nature of Lattice Defects Induced by Excimer Laser Irradiation for Extrinsic Gettering : Condensed Matter
- Cathodoluminescence Study of Striation in In-Doped LEC GaAs Crystals
- Amphoteric Doping in Si-Implanted Undoped or In-Doped Czochralski GaAs
- Role of Dislocations in Semi-Insulation Mechanism in Undoped LEC GaAs Crystal
- 27pPSA-55 触媒反応及び水素吸蔵反応中のPd微粒子動的構造変化(27pPSA 領域9ポスターセッション,領域9(表面・界面,結晶成長))
- Dislocation-Free Junctions Formed by Diffusing Gallium and Boron into Si
- Avalanche Multiplication Enhancement along Dislocation Lines in a Thermally Diffused Junction
- 23pPSB-25 触媒及び水素吸蔵反応中のPd微粒子動的構造(23pPSB 領域9ポスターセッション,領域9(表面・界面,結晶成長))