Amphoteric Doping in Si-Implanted Undoped or In-Doped Czochralski GaAs

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概要

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• We have studied the conditions causing amphoteric doping in Si-implanted Czochralski GaAs by photoluminescence and Hall effect measurements. Wafers of either undoped or In-doped GaAs were implanted and capped with either SiN_x or SiO_x before the activation anneal. Localized, strong amphoteric doping was observed only in SIN_x capped In-doped wafers. In all other annealed wafers only donor activity was detected. This effect is explained by the point defect reactions due to the presence of In and the interaction of the GaAs with the capping material during annealing.

• 社団法人応用物理学会の論文
• 1987-08-20

著者

• ONO Haruhiko

  Fundamental Research Laboratories, NEC Corporation

• Ono Haruhiko

  Fundamental Research Laboratories Nec Corporation

• Matsui Junji

  Fundamental Research Laboratories Nec Corporation

• Kuzuhara Masaaki

  Microelectronics Research Laboratories Nec Corporation

• WARWICK Colin

  Fundamental Research Laboratories, NEC Corporation

• Warwick Colin

  Fundamental Research Laboratories Nec Corporation:royal Signals And Radar Establishment

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• Synchrotron Plane Wave X-Ray Topography of 6 inch Diameter Si Crystal
• Generation Rule of the Slip Dislocation in LEC GaAs Crystal
• The Effect of Reduction of Dislocation Density on the Lattice Distortions in Undoped GaAs Single Crystal Grown by LEC Method
• X-Ray Topography Examination of Lattice Distortions in LEC-Grown GaAs Single Crystals
• Generation of Slip Dislocations during Czochralski Growth of Semiconductor Crystals Pullen in a Axis
• Crystallization of Amorphous Silicon with Clean Surfaces
• Appropriate Pulling Axis Orientation to Suppress Slip Dislocation Generation during Czochralski Growth of Semiconductor Crystals : Condensed Matter
• Influence of In Atoms on the Shape of Dislocation Etch Pits in LEC In-Doped GaAs Crystals
• Nature of Lattice Defects Induced by Excimer Laser Irradiation for Extrinsic Gettering : Condensed Matter
• Cathodoluminescence Study of Striation in In-Doped LEC GaAs Crystals
• Amphoteric Doping in Si-Implanted Undoped or In-Doped Czochralski GaAs

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