Cathodoluminescence Study of Striation in In-Doped LEC GaAs Crystals
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概要
- 論文の詳細を見る
Growth striations in In-doped LEC-grown GaAs crystals were investigated by means of cathodoluminescence (CL). Spatial variation signals of the CL intensity across the striations were observed to depend on the detected wavelength. The variation is interpreted to correspond to the periodical variation of the energy band gap, which is related to microscopic inhomogeneity of In concentration across the striations. The concentration varies periodically within 10〜20% of its average value. The striations revealed by photo-etching were in complete agreement with those observed by CL.
- 社団法人応用物理学会の論文
- 1986-02-20
著者
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Watanabe Hisao
Fundamental Research Laboratories Nec Corporation
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Ono Haruhiko
Fundamental Research Laboratories Nec Corporation
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Matsui J
Himeji Inst. Technol. Hyogo Jpn
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Matsui Junji
Fundamental Research Laboratories Nec Corporation
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Kamejima Taibun
Analysis And Evaluation Technology Center Nec Corporation
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KAMEJIMA Taibun
Fundamental Research Laboratories, NEC Corporation
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