Crystallization of Amorphous Silicon with Clean Surfaces

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-06-01

著者

• SAKAI Akira

  Fundamental Research Laboratories, NEC Corporation

• ONO Haruhiko

  Fundamental Research Laboratories, NEC Corporation

• Ono Haruhiko

  Fundamental Research Laboratories Nec Corporation

• Tatsumi Toru

  Fundamental Research Laboratories Nec Corporation

• Ishida Koichi

  Fundamental Research Laboratories, NEC Corporation

• Nino Taeko

  Microelectronics Research Laboratories, NEC Corporation

• Sakai Akira

  Fundamental Research Laboratories Nec Corporation

• Tatsumi Toru

  Fundamental Research Laboratories, NEC Corporation

関連論文

• Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
• Surface Morphology Study for Hexagonal GaN Grown on GaAs(100) Substrates by Hydride Vapor Phase Epitaxy
• Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
• Nanometer-Scale Imaging of Lattice Deformation with Transmission Electron Micrograph
• Generation Rule of the Slip Dislocation in LEC GaAs Crystal
• Generation of Slip Dislocations during Czochralski Growth of Semiconductor Crystals Pullen in a Axis
• Crystallization of Amorphous Silicon with Clean Surfaces
• Advanced Techniques to Decrease Defect Density in Molecular Beam Epitaxial Silicon Films
• Surface Segregation at Boron Planar Doping in Silicon Molecular Beam Epitaxy : Condensed Matter
• Influence of In Atoms on the Shape of Dislocation Etch Pits in LEC In-Doped GaAs Crystals
• Nature of Lattice Defects Induced by Excimer Laser Irradiation for Extrinsic Gettering : Condensed Matter
• Cathodoluminescence Study of Striation in In-Doped LEC GaAs Crystals
• Amphoteric Doping in Si-Implanted Undoped or In-Doped Czochralski GaAs
• Si/SiO_x/Si Hole-Barrier Fabrication for Bipolar Transistors Using Molecular Beam Deposition

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