Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-07-15
著者
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Sunakawa H
Nec Corp. Ibaraki Jpn
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Yamaguchi A
System Devices And Fundamental Research Nec Corporation
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SUNAKAWA Haruo
Opto-electronics and High Frequency Device Research Laboratories, NEC Corporation
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USUI Akira
Opto-electronics and High Frequency Device Research Laboratories, NEC Corporation
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YAMAGUCHI A.
Fundamental Research Laboratories, NEC Corporation
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SAKAI Akira
Fundamental Research Laboratories, NEC Corporation
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Yamaguchi A.
Fundamental Research Laboratories Nec Corporation
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Usui A
Nec Corp. Ibaraki Jpn
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Usui Akira
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Usui A
Aist Ibaraki
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Usui Akira
Opto-electronics And High Frequency Device Research Laboratories Nec Corporation
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Sakai Akira
Fundamental Research Laboratories Nec Corporation
関連論文
- Alloy Semiconductor System with Tailorable Band-Tail: A Band-State Model and Its Verification Using Laser Characteristics of InGaN Material System : Optics and Quantum Electronics
- InGaN MQW Lasr Diodes Grown on an n-GaN Substrate with a Backside n-Contact(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- X-Ray Rocking Curve Determination of Twist and Tilt Angles in GaN Films Grown by an Epitaxial-Lateral-Overgrowth Technique
- Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
- Surface Morphology Study for Hexagonal GaN Grown on GaAs(100) Substrates by Hydride Vapor Phase Epitaxy
- Growth of InN by Chloride-Transport Vapor Phase Epitaxy
- Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
- Nanometer-Scale Imaging of Lattice Deformation with Transmission Electron Micrograph
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- Dislocation propagation in GaN films formed by epitaxial lateral overgrowth
- Crystallization of Amorphous Silicon with Clean Surfaces
- Anisotropic Optical Matrix Elements in Quantum Wells with Various Substrate Orientations
- Nanoscale InP Islands for Quantum Box Structures by Hydride Vapor Phase Epitaxy
- Room Temperature cw Operation of Visible InGaAsP Double Heterostructure Laser at 671 nm Grown by Hydride VPE
- VPE-Grown 1.3 μm InGaAsP/InP Double-Channel Planar Buried-Heterostructure Laser Diode with LPE-Burying Layers
- Optical Recombination Processes in High Quality GaN Films and InGaN Quantum Wells Grown on FIELO-GaN Substrates
- Nature of Lattice Defects Induced by Excimer Laser Irradiation for Extrinsic Gettering : Condensed Matter
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