Sunakawa H | Nec Corp. Ibaraki Jpn
スポンサーリンク
概要
関連著者
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Sunakawa H
Nec Corp. Ibaraki Jpn
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Usui A
Nec Corp. Ibaraki Jpn
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Usui Akira
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Usui A
Aist Ibaraki
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Yamaguchi A
System Devices And Fundamental Research Nec Corporation
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Kimura A
Photonic And Wireless Devices Research Laboratories Nec Corporation
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YAMAGUCHI A.
Fundamental Research Laboratories, NEC Corporation
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Yamaguchi A.
Fundamental Research Laboratories Nec Corporation
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YAMAGUCHI Atsushi
Fundamental Research Laboratories, NEC Corporation
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SUNAKAWA Haruo
Opto-electronics and High Frequency Device Research Laboratories, NEC Corporation
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KIMURA Akitaka
Opto-electronics and High Frequency Device Research Laboratories, NEC Corporation
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USUI Akira
Opto-electronics and High Frequency Device Research Laboratories, NEC Corporation
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SAKAI Akira
Fundamental Research Laboratories, NEC Corporation
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Nido M
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Usui Akira
Opto-electronics And High Frequency Device Research Laboratories Nec Corporation
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Sakai Akira
Fundamental Research Laboratories Nec Corporation
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Sunakawa Haruo
Fundamental Research Laboratories
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Sunakawa Haruo
Fundamental Res. Labs. Nec Corporation
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KIMURA Akitaka
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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SUNAKAWA Haruo
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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USUI Akira
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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NIDO Masaaki
Opto-electronics Research Laboratories, NEC Corporation
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USUI Akira
Fundamental Research Laboratories, NEC Corporation
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Yamaguchi A.atsushi
Fundamental Research Laboratories Nec Corporation
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Usui Akira
Fundamental Res. Labs. Nec Corporation
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SAKAI Akira
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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KURAMOTO Masaru
The authors are with Optoelectronics and High Frequency Device Res. Labs., NEC Corporation
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MIZUTA Masashi
The authors are with Optoelectronics and High Frequency Device Res. Labs., NEC Corporation
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KOBAYASHI Kenji
Fundamental Research Laboratories, NEC Corporation
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KIMURA Shigeru
Fundamental Research Laboratories, NEC Corporation
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KURAMOTO Masaru
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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SASAOKA Chiaki
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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HISANAGA Yukihiro
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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KURODA Naotaka
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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NIDO Masaaki
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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MIZUTA Masashi
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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KIMURA Akitaka
Opt-electronics Research Laboratories, NEC Corporation
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MANAKO Takashi
Fundamental Research Laboratories, NEC Corporation
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Sasaoka C
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Mizuta M
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Kuroda N
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Kuramoto M
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Kuramoto M
The Authors Are With Optoelectronics And High Frequency Device Res. Labs. Nec Corporation
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Hisanaga Yukihiro
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Kuroda Naotaka
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Manako Takashi
Fundamental Research Laboratories Nec Corporation
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Kimura Shigeru
Fundamental Research Laboratories Nec Corporation
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Mizuta Masashi
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Kobayashi Kenji
Fundamental Research Laboratories Nec Corporation
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Sakai Akira
Department Of Agricultural Chemistry The University Of Tokyo
著作論文
- X-Ray Rocking Curve Determination of Twist and Tilt Angles in GaN Films Grown by an Epitaxial-Lateral-Overgrowth Technique
- Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
- Surface Morphology Study for Hexagonal GaN Grown on GaAs(100) Substrates by Hydride Vapor Phase Epitaxy
- Growth of InN by Chloride-Transport Vapor Phase Epitaxy
- Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
- Dislocation propagation in GaN films formed by epitaxial lateral overgrowth