USUI Akira | Opto-electronics and High Frequency Device Research Laboratories, NEC Corporation
スポンサーリンク
概要
関連著者
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USUI Akira
Opto-electronics and High Frequency Device Research Laboratories, NEC Corporation
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Usui Akira
Opto-electronics And High Frequency Device Research Laboratories Nec Corporation
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Sunakawa H
Nec Corp. Ibaraki Jpn
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Yamaguchi A
System Devices And Fundamental Research Nec Corporation
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SUNAKAWA Haruo
Opto-electronics and High Frequency Device Research Laboratories, NEC Corporation
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Usui A
Nec Corp. Ibaraki Jpn
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Usui Akira
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Usui A
Aist Ibaraki
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KIMURA Akitaka
Opto-electronics and High Frequency Device Research Laboratories, NEC Corporation
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YAMAGUCHI A.
Fundamental Research Laboratories, NEC Corporation
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SAKAI Akira
Fundamental Research Laboratories, NEC Corporation
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Yamaguchi A.
Fundamental Research Laboratories Nec Corporation
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Yamaguchi A.atsushi
Fundamental Research Laboratories Nec Corporation
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Kimura A
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Sakai Akira
Fundamental Research Laboratories Nec Corporation
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KOBAYASHI Kenji
Fundamental Research Laboratories, NEC Corporation
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YAMAGUCHI Atsushi
Fundamental Research Laboratories, NEC Corporation
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KIMURA Shigeru
Fundamental Research Laboratories, NEC Corporation
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NIDO Masaaki
Opto-electronics Research Laboratories, NEC Corporation
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Nido M
Photonic And Wireless Devices Research Laboratories Nec Corporation
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YONENAGA Ichiro
Institute for Materials Research, Tohoku University
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Yonenaga Ichiro
Institute For Materials Research Tohoku University
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Kimura Shigeru
Fundamental Research Laboratories Nec Corporation
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HOSHI Tetsuya
Institute for Materials Research, Tohoku University
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Kobayashi Kenji
Fundamental Research Laboratories Nec Corporation
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Hoshi Tetsuya
Institute For Materials Research Tohoku University
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Yonenaga Ichiro
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
著作論文
- X-Ray Rocking Curve Determination of Twist and Tilt Angles in GaN Films Grown by an Epitaxial-Lateral-Overgrowth Technique
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
- Surface Morphology Study for Hexagonal GaN Grown on GaAs(100) Substrates by Hydride Vapor Phase Epitaxy
- Hardness of Bulk Single-Crystal Gallium Nitride at High Temperatures