Yonenaga Ichiro | Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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概要
- Yonenaga Ichiroの詳細を見る
- 同名の論文著者
- Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japanの論文著者
関連著者
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Yonenaga Ichiro
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Yonenaga Ichiro
Institute For Materials Research Tohoku University
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YONENAGA Ichiro
Institute for Materials Research, Tohoku University
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Yao Takafumi
Center For Interdisciplinary Research Tohoku University
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Taishi Toshinori
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Usami Noritaka
Institute For Material Research Tohoku University
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Suezawa Masashi
Institute For Materials Research Tohoku University
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Minegishi Tsutomu
Center For Interdisciplinary Research Tohoku University
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中島 一樹
富山大学工学部
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FUJIWARA Kozo
Institute for Materials Research (IMR), Tohoku University
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NAKAJIMA Kazuo
Institute for Materials Research (IMR), Tohoku University
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Fujiwara Kozo
Institute For Materials Research (imr) Tohoku University
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Nakajima Kensuke
Research Institute Of Electrical Communication Tohoku University
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Fujiwara K
Institute For Materials Research (imr) Tohoku University
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Yonenaga Ichiro
Tohoku Univ. Sendai Jpn
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Ohno Yutaka
Institute For Materials Research Tohoku University
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Hoshikawa Keigo
Faculty Of Education Shinshu University
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Taishi Toshinori
Institute For Materials Research Tohoku University
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Nakajima Kazuo
Institute For Materials Research (imr) Tohoku University
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Kutsukake Kentaro
Institute For Materials Research (imr) Tohoku University
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Oh Dong-cheol
Center For Optoelectronic Materials And Devices Department Of Defense Science And Technology Hoseo University
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Nakajima Kazuo
Institute for Materials Reseach, Tohoku University, 2-1-1 Katahira-cho, Aoba-ku, Sendai 980-8577, Japan
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TOKUMOTO Yuki
Institute for Materials Research, Tohoku University
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Park Seung-Hwan
Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
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Kim Dong-Jin
Center for Optoelectronic Materials and Devices, Department of Defense Science and Technology, Hoseo University, Asan 336-795, Korea
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Chang Ji-Ho
Department of Semiconductor Physics, Korea Maritime University, Busan 606-791, Korea
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GOTO Takashi
Institute for Materials Research, Tohoku University
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林 好一
東北大学金属材料研究所
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松原 英一郎
東北大金研
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YAO Takafumi
Center for Interdisciplinary Research, Tohoku University
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落合 庄次郎
京大
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Hayashi Kenshi
Department Of Electronics Faculty Of Engineering Kyushu University
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松原 英一郎
京都大学 大学院工学研究科 材料工学専攻
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落合 庄治郎
京都大学工学研究科材料工学専攻
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NAKAJIMA Tetsuo
National Laboratory for High Energy Physics
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松原 英一郎
Department Of Material Science And Engineering Kyoto University
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Goto T
Institute For Materials Research Tohoku University
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Ochiai Shojiro
Department Of Materials Science And Engineering Kyoto University
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TAKAHASHI Yukio
Department of Applied and Environmental Chemistry, Kitami Institute of Technology
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USAMI Noritaka
Institute for Materials Research, Tokoku University
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CHIKYOW Toyohiro
National Institute for Mateirals Science
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Ando Masami
National Laboratory for High Energy Accelerator Research Organization
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MATSUBARA Eiichiro
Institute for Materials Research, Tohoku University
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Usami N
Institute For Materials Research (imr) Tohoku University
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Nakajima T
Materials Design And Characterization Laboratory Institute For Solid State Physics University Of Tok
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KUTSUKAKE Kentaro
Institute for Materials Research (IMR), Tohoku University
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Ochiai Shojiro
Mesoscopic Materials Research Center Graduate School Of Engineering Kyoto University
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Kasuya Atsuo
Center For Interdisciplinary Research Tohoku University
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Huang X
Nanjing Univ. Nanjing Chn
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Sumino K
Tohoku Univ. Sendai Jpn
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Ando Masami
Photon Factory National Laboratory For High-energy Physics
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Ando M
National Lab. High Energy Physics Ibaraki Jpn
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Ando Masami
Photon Factory National Laboratory For High Energy Physics
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Muto Shunsuke
Department Of Materials Physics And Energy Engineering Graduate School Of Engineering Nagoya Univers
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Okuda Hiroshi
Department Of Materials Science And Engineering Kyoto University
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Goto T
Tohoku Univ. Sendai Jpn
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林 好一
京都大学大学院工学研究科
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USUI Akira
Opto-electronics and High Frequency Device Research Laboratories, NEC Corporation
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Nakajima Kazuaki
Process And Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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HAYASHI Kouichi
Institute for Materials Research, Tohoku University
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Nakajima K
Nuclear Engineering Research Laboratory University Of Tokyo
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Matsubara Eiichiro
Department Of Materials Science And Engineering Graduate School Of Engineering Kyoto University
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Matsubara Eiichiro
Department Of Materials Science And Technology Kyoto University
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松原 英一郎
京都大学大学院 工学研究科 材料工学専攻
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Matsubara Eiichiro
Institute For Advanced Materials Processing
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GUNJISHIMA Itaru
Institute for Materials Research, Tohoku University
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AKASHI Takaya
Institute for Materials Research, Tohoku University
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SUMINO Koji
Institute for Materials Research,Tohoku University
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Goto Takashi
Institute For Material Research Tohoku University
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Sumino Koji
Institute For Materials Research Tohoku University
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Sumino Koji
Department Of Physics And Institute Of Solid State Physics Nanjing University
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Dmitriev Vladimir
Tdi Inc.
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Morishita Kohei
Department Of Materials Science And Engineering Kyoto University
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Shima Toshiyuki
Institute For Materials Research Tohoku University
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Shima Toshiyuki
Institute For Materials Research
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Gunjishima Itaru
Institute For Materials Research Tohoku University
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Okuda Hiroshi
Department Of Legal Medicine And Human Genetics Jichi Medical School
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SUZUKI Shigeo
SANYO Tsukuba Research Center
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IWASA Izumi
the Advanced Research Laboratory, Corporate Research Group, Fuji Xerox Co., Ltd.
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Melnik Yuriy
Tdi Inc.
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Sluiter Marcel
Institute For Materials Research Tohoku University
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Nikolaev Andrey
Ioffe Institute And Crystal Growth Research Center
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Iwasa I
Department Of Physics Faculty Of Science University Of Tokyo:fundamental Technology Research Lab.fuj
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Iwasa I
Fundamental Technical Research Laboratory Fuji-xerox Co. Ltd.
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Iwasa Izumi
Department Of Physics Faculty Of Science University Of Tokyo
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Iwasa Izumi
Department Of Physics Faculty Of Science
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Kohno Hideo
Graduate School Of Science Osaka University
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Hayashi K
Photodynamics Research Center Riken (institute Of Physical And Chemical Research)
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Takeda Seiji
Graduate School Of Science Osaka University
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Akashi T
Institute For Materials Research Tohoku University
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Akashi Takaya
Institute For Materials Research Tohoku University
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Tanabe Tetsuo
Department Of Advanced Energy Engineering Science Interdisciplinary Graduate School Of Engineering S
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HUANG Xinming
Faculty of Education, Shinshu University
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HOSHIKAWA Keigo
Faculty of Education, Shinshu University
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Yonenaga I
Institute For Materials Research Tohoku University
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TAISHI Toshinori
Faculty of Education, Shinshu University
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Nakajima Tetsuo
Natio. Inst. Radi. Sci. Div Of Biology And Oncology.
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Goto T
Inst. For Materials Res. Tohoku Univ.
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Morishita Kohei
Institute For Materials Research Tohoku University
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Ichikawa Satoshi
Institute For Nanoscience Design Osaka University
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MORI Yuhki
Graduate School of Science, Osaka University
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Mori Yuhki
Graduate School Of Science Osaka University
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林 好一
Information Science And Electrical Engineering Kyushu University
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SUZUKI Hideji
Institute for Materials Research,Tohoku University
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TAKEBE Masahiro
Institute for Materials Research,Tohoku University
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Lee Hyunjae
Center For Interdisciplinary Research Tohoku University
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Park Seunghwan
Center For Interdisciplinary Research Tohoku University
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Jung Mina
Department Of Nano-semiconductor Engineering National Korea Maritime University
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MELNIK Yuriy
TDI, Inc.
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DMITRIEV Vladimir
TDI, Inc.
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Minegishi Tsutomu
Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
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Oh Dongcheol
Center for Optoelectronic Materials and Devices, Department of Defense Science and Technology, Hoseo
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Taishi Toshinori
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Park Jinsub
Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
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Chang Jiho
Department of nano-semiconductor Engineering, National Korea Maritime University, Busan 606-791, Kor
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Im Inho
Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
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Ha Junseok
Faculty of Applied Chemical Engineering, Chonnam National University, Kwangju 500-757, Korea
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Hong Soonku
Department of Nano Information Systems Engineering, Chungnam National University, Daejeon 305-764, K
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Kojima Ken-ichi
Graduate School Of Integrated Science Yokohama City University
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Takebe M
Tohoku Univ. Sendai Jpn
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Usui Akira
Opto-electronics And High Frequency Device Research Laboratories Nec Corporation
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Chang Jiho
Department Of Nano-semiconductor Engineering National Korea Maritime University
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Huang Xinming
Faculty Of Education Shinshu University
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Chikyow Toyohiro
National Inst. Materials Sci. Ibaraki Jpn
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Im Inho
Center For Interdisciplinary Research Tohoku University
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Ha Junseok
Faculty Of Applied Chemical Engineering Chonnam National University
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Hong Soonku
Department Of Nano Information Systems Engineering Chungnam National University
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Park Jinsub
Center For Interdisciplinary Research Tohoku University
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Oh Dongcheol
Center For Optoelectronic Materials And Devices Department Of Defense Science And Technology Hoseo U
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HOSHI Tetsuya
Institute for Materials Research, Tohoku University
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Mchedlidze Teimouraz
Komatsu Electronic Metals Co., 2612, Sinomiya, Hiratsuka 254, Japan
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Sumino Koji
Institute For Materials Reseach Tohoku University
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Takeda Seiji
Graduate School Of Biological Sciences Nara Institute Of Science And Technology
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Takahashi Yukio
Department Of Applied And Environmental Chemistry Kitami Institute Of Technology
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Mchedlidze Teimouraz
Komatsu Electronic Metals Co.
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Suezawa Masashi
Graduate School Of Integrated Science Yokohama City University
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Minegishi Tsutomu
Department Of Chemical System Engineering The University Of Tokyo
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Suzuki Shigeo
Sanyo Electric Co. Ltd. Tsukuba Research Center
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Hoshi Tetsuya
Institute For Materials Research Tohoku University
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Okuda Hiroshi
Department Of Biochemistry Osaka Dental University
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Takeda Seiji
Osaka Univ. Osaka Jpn
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Kohno Hideo
Osaka Univ. Osaka Jpn
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Sugiyama Hiroshi
Department Of Chemistry Faculty Of Science
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Ochiai Shojiro
Department Of Materials Science And Engineering Graduate School Of Engineering Kyoto University
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Usami Noritaka
Institute for Materials Research (IMR), Tohoku University
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Sluiter Marcel
Institute for Materials Researc, Tohoku University
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Uda Satoshi
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Hoshikawa Takeshi
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Hoshikawa Keigo
Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
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OHNO Yutaka
Institute for Materials Research, Tohoku University
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Sugiyama Hiroshi
Department of Materials, Physics and Energy Engineering, Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
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Yonenaga Ichiro
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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YONENAGA Ichiro
Institute for Materials Research,Tohoku University
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TAISHI Toshinori
Faculty of Education, Shinshu University:(Permanent address)Faculty of Engineering, Shinshu University
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NAKAJIMA Tetsuo
Natio. Inst. Radi. Sci. , Div of Biology and Oncology.
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LEE Hyun-Jae
Center for Interdisciplinary Research, Tohoku University
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Yao Takafumi
Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
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Yonenaga Ichiro
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Chang Jiho
Department of Applied Science, National Korea Maritime University, Busan 606-791, Republic of Korea
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Suezawa Masashi
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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KASUYA Atsuo
Center for Interdisciplinary Research and Graduate School of Engineering, Tohoku University
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OHNO Yutaka
Institute for Materials Research (IMR), Tohoku University
著作論文
- High Temperature Transport Property of B- and P-Doped GeSi Single Crystals Prepared by a Czochralski Method
- Structural Origin of a Cluster of Bright Spots in Reverse Bias Electroluminescence Image of Solar Cells Based on Si Multicrystals
- X-ray Fluorescence Holography Study on Si_Ge_x Single Crystal
- Realization of a High-Performance Point-Focusing Monochromator for X-ray Studies
- In situ Transmission Electron Microscopy Observation of the Graphitization of Silicon Carbide Nanowires Induced by Joule Heating
- Dislocation-Free Czochralski Si Crystal Growth without Dash Necking Using a Heavily B and Ge Codoped Si Seed
- Observation of Lattice Defects in Solid Helium by SR X-Ray Topography
- High-Temperature Hardness of Bulk Single-Crystal AlN : Semiconductors
- High-Quality p-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates
- Nano-Indentation Hardness and Elastic Moduli of Bulk Single-Crystal AIN : Short Note
- Reply to "Comment on 'Comment on "Observation of Low-Temperature Elastic Softening due to Vacancy in Crystalline Silicon"'"
- Hardness of Bulk Single-Crystal Gallium Nitride at High Temperatures
- Hall Effect in Anisotropic SixGe1-x Polycrystals
- Comment on "Observation of Low-Temperature Elastic Softening due to Vacancy in Crystalline Silicon" [J. Phys. Soc. Jpn. 75 (2006) 044602]
- Temperature Dependences of Acceptor Concentration, Conductivity Mobility, and Resistivity of Ga-Doped Czochralski-Si Crystals
- Annihilation of Acceptor–Hydrogen Pairs in Si Crystals Due to Electron Irradiation
- Influence of Isoelectronic Te Doping on the Physical Properties of ZnO Films Grown by Molecular-Beam Epitaxy
- Structure of Oxygen-Related Defect Centers in Ge1-xSix Alloys Studied by Extended Energy-Loss Fine Structure Analysis
- Formation and Evolution of Misoriented Grains in α-Plane Oriented Gallium Nitride Layers
- Carrier Mobility and Resistivity of $n$- and $ p$-Type SixGe1-x ($0.93
- Influence of Isoelectronic Te Doping on the Physical Properties of ZnO Films Grown by Molecular-Beam Epitaxy
- On the Extended Point Defect Model in Si Crystals at High Temperature
- Control of Grain Boundary Propagation in Mono-Like Si : Utilization of Functional Grain Boundaries