Hall Effect in Anisotropic SixGe1-x Polycrystals
スポンサーリンク
概要
- 論文の詳細を見る
We studied carrier transport in Si xGe1- x polycrystalline bulk alloys grown by the Czochralski method. The grains in the alloys are elongated in the growth direction due to the supercooling effect. At a high concentration of grains, the anisotropy of their shape leads to an observable anisotropy in the electrical properties of the alloys. The “two-phase geometrical model” was applied to estimate the transport properties of the grains and grain boundary materials from the Hall effect measurements in different directions of the alloys. The results show that in the SiGe polycrystalline alloy, conductive grains are surrounded by high-resistivity barriers. The height of the barriers was calculated to be 0.38 eV and “electrical” thickness 3×10-5 cm.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-15
著者
-
Yonenaga Ichiro
Institute For Materials Research Tohoku University
-
Mchedlidze Teimouraz
Komatsu Electronic Metals Co., 2612, Sinomiya, Hiratsuka 254, Japan
-
Mchedlidze Teimouraz
Komatsu Electronic Metals Co.
-
Yonenaga Ichiro
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
関連論文
- High Temperature Transport Property of B- and P-Doped GeSi Single Crystals Prepared by a Czochralski Method
- Structural Origin of a Cluster of Bright Spots in Reverse Bias Electroluminescence Image of Solar Cells Based on Si Multicrystals
- X-ray Fluorescence Holography Study on Si_Ge_x Single Crystal
- Realization of a High-Performance Point-Focusing Monochromator for X-ray Studies
- In situ Transmission Electron Microscopy Observation of the Graphitization of Silicon Carbide Nanowires Induced by Joule Heating
- Dislocation-Free Czochralski Si Crystal Growth without Dash Necking Using a Heavily B and Ge Codoped Si Seed
- Observation of Lattice Defects in Solid Helium by SR X-Ray Topography
- High-Temperature Hardness of Bulk Single-Crystal AlN : Semiconductors
- High-Quality p-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates
- Nano-Indentation Hardness and Elastic Moduli of Bulk Single-Crystal AIN : Short Note
- Reply to "Comment on 'Comment on "Observation of Low-Temperature Elastic Softening due to Vacancy in Crystalline Silicon"'"
- Hardness of Bulk Single-Crystal Gallium Nitride at High Temperatures
- Hall Effect in Anisotropic SixGe1-x Polycrystals
- Comment on "Observation of Low-Temperature Elastic Softening due to Vacancy in Crystalline Silicon" [J. Phys. Soc. Jpn. 75 (2006) 044602]
- Temperature Dependences of Acceptor Concentration, Conductivity Mobility, and Resistivity of Ga-Doped Czochralski-Si Crystals
- Annihilation of Acceptor–Hydrogen Pairs in Si Crystals Due to Electron Irradiation
- Influence of Isoelectronic Te Doping on the Physical Properties of ZnO Films Grown by Molecular-Beam Epitaxy
- Structure of Oxygen-Related Defect Centers in Ge1-xSix Alloys Studied by Extended Energy-Loss Fine Structure Analysis
- Formation and Evolution of Misoriented Grains in α-Plane Oriented Gallium Nitride Layers
- Carrier Mobility and Resistivity of $n$- and $ p$-Type SixGe1-x ($0.93
- Influence of Isoelectronic Te Doping on the Physical Properties of ZnO Films Grown by Molecular-Beam Epitaxy
- On the Extended Point Defect Model in Si Crystals at High Temperature
- Control of Grain Boundary Propagation in Mono-Like Si : Utilization of Functional Grain Boundaries