High Temperature Transport Property of B- and P-Doped GeSi Single Crystals Prepared by a Czochralski Method
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Institute of Metalsの論文
- 2001-06-20
著者
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GOTO Takashi
Institute for Materials Research, Tohoku University
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Goto T
Institute For Materials Research Tohoku University
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Goto T
Tohoku Univ. Sendai Jpn
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GUNJISHIMA Itaru
Institute for Materials Research, Tohoku University
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AKASHI Takaya
Institute for Materials Research, Tohoku University
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Goto Takashi
Institute For Material Research Tohoku University
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YONENAGA Ichiro
Institute for Materials Research, Tohoku University
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Gunjishima Itaru
Institute For Materials Research Tohoku University
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Akashi T
Institute For Materials Research Tohoku University
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Akashi Takaya
Institute For Materials Research Tohoku University
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Yonenaga Ichiro
Institute For Materials Research Tohoku University
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Goto T
Inst. For Materials Res. Tohoku Univ.
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Yonenaga Ichiro
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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