Laser chemical vapor deposition of TiN film on Ti(C,N)-based cermet substrate using Ti(OiPr)2(dpm)2–NH3 system
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概要
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TiN films were prepared on Ti(C,N)-based cermet substrate by laser chemical vapor deposition using titanium isopropoxide dipivaloylmethane [Ti(OiPr)2(dpm)2] and ammonia (NH3) as precursors. The effects of deposition temperature (Tdep) and laser power (PL) on the crystal phase, microstructure and adhesion were investigated. TiN film was prepared at Tdep > 903 K (PL > 100 W). The microstructure of TiN film changed from rose-like grains to pyramid-like grains to aggregate grains with increasing PL and Tdep. Highly adhesive film was obtained at moderate Tdep = 1047 K (PL = 120 W).
著者
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TU Rong
Institute for Materials Research, Tohoku University
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GOTO Takashi
Institute for Materials Research, Tohoku University
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Ito Akihiko
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Tu Rong
Inst. For Materials Res. Tohoku Univ.
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Tu Rong
Institute For Materials Research Tohoku University
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You Yu
Institute for Materials Research, Tohoku University
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Goto Takashi
Institute For Material Research Tohoku University
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Rong Tu
Institute For Materials Research Tohoku University
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Ito Akihiko
Institute For Materials Research Tohoku University
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