Epitaxial Integration of (100) Bi4Ti3O12 with (0001) ZnO through Long-Range Lattice Matching
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概要
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We report on an epitaxial relationship with a long-range lattice matching between the (100) plane of Bi-layered structure Bi4Ti3O12 (BiT) and the (0001) plane of wurtzite structure ZnO: BiT(100)[001] \parallel ZnO(0001)\langle 01\bar{1}0\rangle. Epitaxial (100)-oriented Ho-doped BiT thin film with the composite of Bi3.6Ho0.4Ti3O12 (BHT) was integrated with (0001)-oriented Al-doped ZnO (AZO) layer buffered c-sapphire substrate by pulsed laser deposition. X-ray diffraction and transmission electron microscopy characterizations validated the epitaxial orientation relationship, which was BHT(100)[001] \parallel AZO(0001)\langle 01\bar{1}0\rangle. The heteroepitaxy of (100) BiT with (0001) ZnO through long-range lattice matching opens the way to the study of novel BiT/ZnO-based ferroelectric wide-band-gap semiconductor heterostructure.
- 2012-08-25
著者
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Tu Rong
Institute For Materials Research Tohoku University
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Chen Fei
State Key Laboratory Of Advanced Technology For Materials Synthesis And Processing Wuhan University
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Zhang Lianmeng
State Key Lab Of Advanced Technology For Materials Synthesis And Processing Wuhan University Of Tech
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Shen Qiang
State Key Laboratory Of Advanced Technology For Materials Synthesis And Processing Wuhan University
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Luo Sijun
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, People's Republic of China
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TANG Xinfeng
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology
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Tu Rong
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Zhang Lianmeng
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, People's Republic of China
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Shen Qiang
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, People's Republic of China
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Wang Chuanbin
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, People's Republic of China
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Zhang Song
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Liu Shulong
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, People's Republic of China
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LIU Shulong
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology
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Liu Shulong
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, People's Republic of China
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WANG Chuanbin
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology
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LUO Sijun
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology
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Chen Fei
State Key Lab of ASIC and Systems, Department of Microelectronics, Fudan University, Shanghai 200433, China
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ZHANG Song
Institute for Materials Research, Tohoku University
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