Preparation and Thermoelectric Properties of Bi-Doped Mg_2Si_<0.8>Sn_<0.2> Compound

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概要

著者

Chen Fei
State Key Laboratory Of Advanced Technology For Materials Synthesis And Processing Wuhan University
Zhang Lianmeng
State Key Laboratory Of Advanced Technology For Materials Synthesis And Processing Wuhan University
Zhang Lianmeng
State Key Lab Of Advanced Technology For Materials Synthesis And Processing Wuhan University Of Tech
LUO Weijun
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University
YANG Meijun
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University
SHEN Qiang
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University
JIANG Hongyi
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University
Shen Qiang
State Key Laboratory Of Advanced Technology For Materials Synthesis And Processing Wuhan University
Luo Weijun
State Key Laboratory Of Advanced Technology For Materials Synthesis And Processing Wuhan University
Yang Meijun
State Key Laboratory Of Advanced Technology For Materials Synthesis And Processing Wuhan University
Jiang Hongyi
State Key Laboratory Of Advanced Technology For Materials Synthesis And Processing Wuhan University
Chen Fei
State Key Lab of ASIC and Systems, Department of Microelectronics, Fudan University, Shanghai 200433, China

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