Deposition of α-Al2O3 films on Ti(C, N)-based cermet substrate by laser chemical vapor deposition using a diode laser
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概要
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α-Al2O3 film was first deposited on Ti(C, N)-based cermet substrate by laser chemical vapor deposition (LCVD) in a CO2–H2 atmosphere. The effects of atmosphere, laser power (PL), total pressure (Ptot) and deposition temperature (Tdep) on the crystal phase and microstructure were investigated. α- and γ-phase mixture film was prepared at Tdep = 833 K. Single phase α-Al2O3 film was obtained at Tdep = 903 K. The surface morphology of α-Al2O3 film changed from a cauliflower-like to a granular-like structure with increasing Tdep and decreasing Ptot. α-Al2O3 film with a well-developed facet structure was obtained at Ptot = 0.6 kPa and Tdep = 933 K.
- 公益社団法人 日本セラミックス協会の論文
著者
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TU Rong
Institute for Materials Research, Tohoku University
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GOTO Takashi
Institute for Materials Research, Tohoku University
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Ito Akihiko
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Tu Rong
Inst. For Materials Res. Tohoku Univ.
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Tu Rong
Institute For Materials Research Tohoku University
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You Yu
Institute for Materials Research, Tohoku University
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Goto Takashi
Institute For Material Research Tohoku University
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Rong Tu
Institute For Materials Research Tohoku University
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Ito Akihiko
Institute For Materials Research Tohoku University
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