Leakage Current Properties of PZT Thin Film Capacitors
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概要
- 論文の詳細を見る
Pb (Zr, Ti)O_3, Lead Zirconium Titanium oxide thin films were fabricated on Pt (111)/Ti0_x/SiO_2/Si (100) and some oxide electrodes (SRO, IrO_2) on PZT thin films by the chemical solution deposition method, RF sputtering and PLD method. A leakage current and ferroelectric polarization switching in these PZT film capacitors were measured. We have discussed the nature of electrical conduction, and a fatigue of ferroelectric polarization switching in the PZT films. Therefore, it is clear that a variety of mechanisms, including surface-limited process such as Schottky, Poole-Frenkel, Space-Charge-Limited-Currents (SCLS) and the fatigue of polarization switch- ing, are caused by a ferroelectric domain pinning effect.
- 八戸工業大学の論文
- 2004-02-27
著者
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GOTO Takashi
Institute for Materials Research, Tohoku University
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MASUDA Yoichiro
Department of Electrical Engineering, Faculty of Engineering, Hachinohe Institute of Technology
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Goto Takashi
Institute For Material Research Tohoku University
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Masuda Yoichiro
Department Of Electrical And Electronics Engineering Graduate School Hachinohe Institute Of Technolo
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NOZAKA Takashi
Department of Electrical and Electronics Engineering, Graduate school, Hachinohe Institute of Techno
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MASUMOTO Hirosih
Institute for Material Research, Tohoku University
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Nozaka T
Hachinohe Inst. Of Technol. Aomori Jpn
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Masumoto H
Institute For Material Research Tohoku University
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Masumoto Hiroshi
Institut Fur Physiologische Chemie I Heinrich-heine-universitat Dusseldorf
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Masuda Yoichiro
Department of Applied Chemistry, Graduate School of Engineering, Nagoya University
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