Hardness of Bulk Single-Crystal Gallium Nitride at High Temperatures
スポンサーリンク
概要
- 論文の詳細を見る
The hardness of single-crystal gallium nitride at elevated temperatures is measured and compared with that of other semiconductors. A Vickers indentation method was used to determine the hardness under an applied load of 0.5 N in the temperature range 20-1200°C. The average hardness was measured as 10.8GPa at room temperature, which is comparable to that of Si. At elevated temperatures, GaN shows higher hardness than Si and GaAs. A high mechanical stability for GaN is deduced.
- 社団法人応用物理学会の論文
- 2000-03-15
著者
-
USUI Akira
Opto-electronics and High Frequency Device Research Laboratories, NEC Corporation
-
YONENAGA Ichiro
Institute for Materials Research, Tohoku University
-
Yonenaga Ichiro
Institute For Materials Research Tohoku University
-
Usui Akira
Opto-electronics And High Frequency Device Research Laboratories Nec Corporation
-
HOSHI Tetsuya
Institute for Materials Research, Tohoku University
-
Hoshi Tetsuya
Institute For Materials Research Tohoku University
-
Yonenaga Ichiro
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
関連論文
- X-Ray Rocking Curve Determination of Twist and Tilt Angles in GaN Films Grown by an Epitaxial-Lateral-Overgrowth Technique
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
- Surface Morphology Study for Hexagonal GaN Grown on GaAs(100) Substrates by Hydride Vapor Phase Epitaxy
- High Temperature Transport Property of B- and P-Doped GeSi Single Crystals Prepared by a Czochralski Method
- Structural Origin of a Cluster of Bright Spots in Reverse Bias Electroluminescence Image of Solar Cells Based on Si Multicrystals
- X-ray Fluorescence Holography Study on Si_Ge_x Single Crystal
- Realization of a High-Performance Point-Focusing Monochromator for X-ray Studies
- In situ Transmission Electron Microscopy Observation of the Graphitization of Silicon Carbide Nanowires Induced by Joule Heating
- Dislocation-Free Czochralski Si Crystal Growth without Dash Necking Using a Heavily B and Ge Codoped Si Seed
- Observation of Lattice Defects in Solid Helium by SR X-Ray Topography
- High-Temperature Hardness of Bulk Single-Crystal AlN : Semiconductors
- High-Quality p-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates
- Nano-Indentation Hardness and Elastic Moduli of Bulk Single-Crystal AIN : Short Note
- Reply to "Comment on 'Comment on "Observation of Low-Temperature Elastic Softening due to Vacancy in Crystalline Silicon"'"
- Hardness of Bulk Single-Crystal Gallium Nitride at High Temperatures
- Hall Effect in Anisotropic SixGe1-x Polycrystals
- Comment on "Observation of Low-Temperature Elastic Softening due to Vacancy in Crystalline Silicon" [J. Phys. Soc. Jpn. 75 (2006) 044602]
- Temperature Dependences of Acceptor Concentration, Conductivity Mobility, and Resistivity of Ga-Doped Czochralski-Si Crystals
- Annihilation of Acceptor–Hydrogen Pairs in Si Crystals Due to Electron Irradiation
- Influence of Isoelectronic Te Doping on the Physical Properties of ZnO Films Grown by Molecular-Beam Epitaxy
- Structure of Oxygen-Related Defect Centers in Ge1-xSix Alloys Studied by Extended Energy-Loss Fine Structure Analysis
- Formation and Evolution of Misoriented Grains in α-Plane Oriented Gallium Nitride Layers
- Carrier Mobility and Resistivity of $n$- and $ p$-Type SixGe1-x ($0.93
- Influence of Isoelectronic Te Doping on the Physical Properties of ZnO Films Grown by Molecular-Beam Epitaxy
- On the Extended Point Defect Model in Si Crystals at High Temperature
- Control of Grain Boundary Propagation in Mono-Like Si : Utilization of Functional Grain Boundaries