Structure of Oxygen-Related Defect Centers in Ge1-xSix Alloys Studied by Extended Energy-Loss Fine Structure Analysis

概要

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Oxygen atoms dissolved near the surface regions in Ge1-xSix alloys were studied by extended energy-loss fine structure (EXELFS) analysis using electron energy-loss spectroscopy (EELS) and the local structures around oxygen were determined. Oxygen preferentially formed Si–O–Si centers, rather than Si–O–Ge or Ge–O–Ge. The O–Si bond length was increased with decreasing the Si content, in accordance with the increase in the Si–Si, Si–Ge and Ge–Ge bond lengths. The increase in O–Si bond length is much more significant than that expected from the changes in Si–Si, Si–Ge and Ge–Ge bond lengths. The derived local atomic configuration of the Si–O–Si center changed with increasing Si content, which corresponds well to the surface oxidization process of crystalline silicon.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-04-15