Structure of an Oxygen-Related Defect Complex in SiC Studied with Electron Energy-Loss Spectroscopy
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概要
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The atomic configuration of an oxygen-related defect complex in a SiC crystal was determined with the analyses of the extended energy-loss fine structure (EXELFS) and energy-loss near-edge structure (ELNES) in the electron energy-loss spectroscopy (EELS) associated with a transmission electron microscope (TEM). It was found that oxygen occupies a carbon site substitutionally in the SiC lattice, forming the O–$V_{\text{C}}$ (carbon vacancy) complex. The structure is very similar to the so-called '$A$-center', which is known as an oxygen-vacancy complex in silicon. The present EXELFS/ELNES analysis can open up a wide range of possibilities for the structural analysis of point defects associated with light element impurities such as carbon, oxygen and nitrogen, complementary to XAFS techniques using synchrotron orbital radiation (SOR) sources.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-03-15
著者
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Muto Shunsuke
Department Of Materials Physics And Energy Engineering Graduate School Of Engineering Nagoya Univers
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Tanabe Tetsuo
Department Of Advanced Energy Engineering Science Interdisciplinary Graduate School Of Engineering S
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Kimura Tomohiko
Department Of Elctro-photo-optics Faculty Of Engineering Tokai University
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Sugiyama Hiroshi
Department Of Chemistry Faculty Of Science
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Muto Shunsuke
Department of Nuclear Engineering, Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya 463-8603, Japan
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Tanabe Tetsuo
Department of Nuclear Engineering, Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya 463-8603, Japan
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Kimura Tomohiko
Department of Chemistry, Faculty of Science, The University of Tokyo
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