Transmission Electron Diffraction Pattern of Electron-Irradiation-Induced {113}-Faulted Loops in Si
スポンサーリンク
概要
- 論文の詳細を見る
Transmission electron diffraction patterns from {113}-faulted loops in Si, which are introduced by electron irradiation in a high-voltage electron microscope, have been observed for the first time. The diffraction patterns were observed after removing the perfect crystal of Si by ion-thinning. The patterns were taken under the plan-view condition. The patterns were consistently interpreted by assuming a 1×1 unit cell on a {113} plane.
- 社団法人応用物理学会の論文
- 1990-09-20
著者
-
Muto Shunsuke
Department Of Materials Physics And Energy Engineering Graduate School Of Engineering Nagoya Univers
-
Muto S
Yamanashi Univ. Kofu
-
Hirata Mitsuji
Department Of Physics Boston College:(permanent Address)department Of Physics Osaka University
-
Takeda Seiji
Department Of Botany Graduate School Of Science Kyoto University
-
Takeda Seiji
Department Of Physics College Of General Education Osaka University
関連論文
- Ab-initio Calculation of Si-K and Si-L ELNES Edges in an Extended Inactive Defect Model of Crystalline Silicon
- New Polytypes in the Co-rich Sm-Co system
- Transmission Electron Microscopy and Electron Energy-Loss Spectroscopy Analysis of Hydrogenated Nanostructured Graphite Prepared by Mechanical Milling
- Diagnostic Nano-Analysis of Materials Properties by Multivariate Curve Resolution Applied to Spectrum Images by S/TEM-EELS
- Spectral restoration and energy resolution improvement of electron energy-loss spectra by Pixon reconstruction : I. Principle and test examples
- Silicon Nanoneedles Grown by a Simple Thermal Treatment Using Metal-Sulfur Catalysts : Short Note
- Structure of Oxygen-Related Defect Centers in Ge_Si_x Alloys Studied by Extended Energy-Loss Fine Structure Analysis
- Structure of an Oxygen-Related Defect Complex in SiC Studied with Electron Energy-Loss Spectroscopy
- Characterization of Nanodome on GaN Nanowires Formed with Ga Ion Irradiation
- Cross Sectional TEM Observation of Gas-Ion-Irradiation Induced Surface Blisters and Their Precursors in SiC
- Crystallization of Amorphous Si and Ge Whiskers
- Change in Mechanical Properties of Ion-Irradiated Ceramics Studied by Nanoindentation
- VAJ/GFA1/CLO is Involved in the Directional Control of Floral Organ Growth
- Possibility of Di-Vacancy Migration at 0℃ in Irradiated Germanium
- Study of Electron-Irradiation-Induced Defects in GaP by In-situ Optical Spectroscopy in a Transmission Electron Microscope
- Analysis of polarization by means of polarized cathodoluminescence spectroscopy in a TEM
- Substructures of Gas-Ion-Irradiation-Induced Surface Blisters in Silicon Studied by Cross-Sectional Transmission Electron Microscopy
- Annealing of Irradiated Silicon Containing Phosphorus Atoms
- Site-Selective Electronic Structure of Aluminum in Oxide Ceramics Obtained by TEM-EELS Analysis Using the Electron Standing-Wave Method
- Spectral restoration and energy resolution improvement of electron energy-loss spectra by Pixon reconstruction : II. Application to practical ELNES analysis of low SNR
- Effects of Gamma Irradiation on Minority Carrier Lifetime in Germanium Single Crystals
- Acceptor Impurity Associated Dffects in Silicon
- Recovery Stages by Lifetime Measurements in Irradiated P-Type Silicon
- Characteristics of Whisker Growth in Amorphous Silicon
- Visual Observation of Whisker Growth in Amorphous Silicon
- Measurement of Young's Modulus in Amorphous Silicon Whiskers
- Growth of Amorphous Germanium Whiskers
- Valence Change of Cations in Ceria-Zirconia Solid Solution Associated with Redox Reactions Studied with Electron Energy-Loss Spectroscopy
- Recovery Spectra of Conductivity and Carrier Lifetime in Germanium Bombarded with Electrons of 1.5 MeV or Co 60 Gamma Rays
- Recovery Spectra of N-Type Germanium Bombarded with Electrons of 1.5 MeV at 77 K
- Polytypes and Intergrowth of the Intermetallic Compounds Sm_2Ni_7
- High-Resolution Electron Microscopy of the Tweed Microstructure in an Fe-Pd Alloy : Condensed Matter
- Atomic Structure of a Defect Colony in Silicon Introduced during Neutron Irradiation in the JOYO Reactor
- Amorphous Silicon Fibers Grown by Thermal Decomposition of SiH_4
- Reverse Annealing Stage in Irradiated Germanium Containing Arsenic
- Growth of Amorphous Silicon Fibers
- Transmission Electron Diffraction Pattern of Electron-Irradiation-Induced {113}-Faulted Loops in Si
- Electron-Bombardment Induced Annealing Stages in N-Type Germanium I
- Role of Agents in Filamentary Growth of Amorphous Silicon
- The Interactions of Point Defects with Impurities in Silicon
- Diffusion Process of Interstitial Atoms in an Electron Irradiated InP Studied by Transmission Electron Microscopy
- Growth of New Form Germanium Whiskers
- Local Electronic and Atomic Structure of Ce^-Containing Fluoride/Oxide Determined by TEM-EELS and First-Principles Calculations
- Dielectric properties of extended defects in silicon studied by high-resolution transmission EELS
- An Atomic Model of Electron-Irradiation-Induced Defects on {113} in Si
- Plasmon-loss imaging of chains of crystalline-silicon nanospheres and silicon nanowires
- Vacancy Capture Radii of Impurity Atoms in Silicon
- Analysis of Lattice Modulations in the Tweed Structure of an Fe-Pd Alloy by Image Processing of a High-Resolution Electron Micrograph
- Energy-drift correction of electron energy-loss spectra from prolonged data accumulation of low SNR signals
- Systematic Characterization of Carbon Nanotubes Functionalized in CF4 Plasma
- Environmental Transmission Electron Microscopy Observations of Swinging and Rotational Growth of Carbon Nanotubes
- Transmission Electron Microscopy and Electron Energy-Loss Spectroscopy Analysis of Hydrogenated Nanostructured Graphite Prepared by Mechanical Milling
- Structure of an Oxygen-Related Defect Complex in SiC Studied with Electron Energy-Loss Spectroscopy
- Intense Monochromatic Light Emission from Multiple Nanoscale Twin Boundaries in Indirect-gap AlGaAs Epilayers
- Electron-Bombardment Induced Annealing Stages in n-Type Germanium II
- Structure of Oxygen-Related Defect Centers in Ge1-xSix Alloys Studied by Extended Energy-Loss Fine Structure Analysis
- Fabrication of Short-Range Ordered Nanoholes on Silicon Surfaces by Electron Irradiation
- Fabricating p–n Structures by Growing Highly Doped Si Nanoneedles on Low Doped Si Substrates via Fully Self-Organized Process
- Carbon Beads on Semiconductor Nanowires