Crystallization of Amorphous Si and Ge Whiskers
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概要
- 論文の詳細を見る
Crystallization processes of amorphous Si (21-j>i) and Go (a-Go) whiskers havebeen investigated by using differential thermal a?aalysis (DTA) and X-ray diffrac-tion. On the crystallization of the a-St and a-Go v,rhiskers, the DTA peak tempera-ture is 907 and 527'C at a heating rate of 20'C/min, the activation energy is about5 and 2.3 eV, and the exothermic heat is about: 4 and 3 kcal/mol, respectively.It is found that the energy difference between the amorphous and crystallinestates is much smaller than the energy barrier fo?' the crystallization in both casesof Si and Go. Furthermore, from the observ;ntions on the crystallization ofamorphous films, it can be concluded that the zt-Si whisker is more stable thanother amorphous semiconductor films.
- 社団法人日本物理学会の論文
- 1981-07-15
著者
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YAMADA Kazuyoshi
Department of Physics, Tohoku University
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Yamada Kazuyoshi
Department Of Geriatrics Narita Memorial Hospital
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Tatsumi Yukichi
Department Of Physics College Of General Education Osaka University
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HIRATA Mitsuji
Department of Physics,College of General Education,Osaka University
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Hirata Mitsuji
Department Of Physics College Of General Education Osaka University
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Hirata Mitsuji
Department Of Physics Boston College:(permanent Address)department Of Physics Osaka University
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Yamada Kazuyoshi
Department Of Metal Physics Faculty Of Engineering Science Osaka University
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