Possibility of Di-Vacancy Migration at 0℃ in Irradiated Germanium
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1974-01-05
著者
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FUKUMOTO Masanori
Department of Ophthalmology, Osaka Medical College
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Fukumoto Masanori
Department Of Physics College Of General Education Osaka University
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Fukumoto Masanori
Department Of Ophthalmology Osaka Medical College
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HIRATA Mitsuji
Department of Physics,College of General Education,Osaka University
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Hirata Mitsuji
Department Of Physics Boston College:(permanent Address)department Of Physics Osaka University
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- Crystallization of Amorphous Si and Ge Whiskers
- Possibility of Di-Vacancy Migration at 0℃ in Irradiated Germanium
- Annealing of Irradiated Silicon Containing Phosphorus Atoms
- Effects of Gamma Irradiation on Minority Carrier Lifetime in Germanium Single Crystals
- Acceptor Impurity Associated Dffects in Silicon
- Recovery Stages by Lifetime Measurements in Irradiated P-Type Silicon
- Characteristics of Whisker Growth in Amorphous Silicon
- Visual Observation of Whisker Growth in Amorphous Silicon
- Measurement of Young's Modulus in Amorphous Silicon Whiskers
- Growth of Amorphous Germanium Whiskers
- Recovery Spectra of Conductivity and Carrier Lifetime in Germanium Bombarded with Electrons of 1.5 MeV or Co 60 Gamma Rays
- Recovery Spectra of N-Type Germanium Bombarded with Electrons of 1.5 MeV at 77 K
- Atomic Structure of a Defect Colony in Silicon Introduced during Neutron Irradiation in the JOYO Reactor
- Amorphous Silicon Fibers Grown by Thermal Decomposition of SiH_4
- Reverse Annealing Stage in Irradiated Germanium Containing Arsenic
- Growth of Amorphous Silicon Fibers
- Transmission Electron Diffraction Pattern of Electron-Irradiation-Induced {113}-Faulted Loops in Si
- Electron-Bombardment Induced Annealing Stages in N-Type Germanium I
- Role of Agents in Filamentary Growth of Amorphous Silicon
- The Interactions of Point Defects with Impurities in Silicon
- Diffusion Process of Interstitial Atoms in an Electron Irradiated InP Studied by Transmission Electron Microscopy
- Growth of New Form Germanium Whiskers
- Vacancy Capture Radii of Impurity Atoms in Silicon
- Electron-Bombardment Induced Annealing Stages in n-Type Germanium II