Vacancy Capture Radii of Impurity Atoms in Silicon
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概要
- 論文の詳細を見る
The interaction of a vacancy with group V impurity atoms in silicon has been studied. Vacancy capture radii were compared among group V impurity atoms As, Sb and Bi. Though absolute values are not given at this time, it is interesting to note the trend that the vacancy capture radius decreases as the convalent radius of impurity atom increases.
- 社団法人日本物理学会の論文
- 1974-04-15
著者
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Hirata Mitsuji
Department Of Physics Boston College:(permanent Address)department Of Physics Osaka University
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Hirata Masako
Department Of Physics College Of General Education Osaka University
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Hirata Masako
Department Of Dermatology Tokyo Medical College
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