Electron-Bombardment Induced Annealing Stages in n-Type Germanium II
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概要
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Annealing stages in n-type germanium bombarded with electrons have been investigated. In isothermal annealing curves it has often been found that the apparent number of defects which recover at a given annealing stage is temperature dependent. The physics of this phenomenon can not be understood simply. In order to give some physical meaning to this phenomenon, an annealing model is proposed. In this model one type of defect is assumed to be annihilated by two annihilation processes which occur nearly simultaneously. One of the processes can be observed by measuring electric resistivity, but the other is assumed to be unobservable. It is further assumed that these processes have different activation energies.
- 社団法人応用物理学会の論文
- 1973-07-05
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