Characteristics of Whisker Growth in Amorphous Silicon
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概要
- 論文の詳細を見る
The growth of amorphous silicon whiskers grown by thermal decomposition of silane (SiH_4) in the temperature range between 500 and 800℃ in an argon atmosphere has been investigated in detail. A thin gold film (about 200 Å) on the substrate seems to act as the most effective catalyzer for the whisker growth. The time rate of axial growth at the beginning of each growth curve seems to be proportional to the partial pressure of SiH_4. Radial growth proceeds at a constant rate and remains constant even after termination of the extension in length. The two mechanisms of elongation and thickening are controlled by independent activation processes whose activation energies are 0.73 eV and 2.1 eV respectivery.
- 社団法人応用物理学会の論文
- 1979-12-05
著者
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Tatsumi Yukichi
Department Of Physics College Of General Education Osaka University
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HIRATA Mitsuji
Department of Physics,College of General Education,Osaka University
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Hirata Mitsuji
Department Of Physics Boston College:(permanent Address)department Of Physics Osaka University
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SHIGI Mikio
Department of Metal Physics, Faculty of Engineering Science, Osaka University
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