Effects of Gamma Irradiation on Minority Carrier Lifetime in Germanium Single Crystals
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概要
- 論文の詳細を見る
Arsenic and antimony doped germanium were irradiated by Co 60 gamma rays at -72℃. Changes in the minority carrier lifetime were studied as a function of time and temperature for various periods after the irradiations. The formation of traps was observed in arsenic doped crystals after irradiation. The position of the trapping level was found to be 0.18 eV from the valence band. In antimony doped crystals, the formation of traps was detected only in a heavily doped sample. The trapping center was stable or rather increased in arsenic doped crystals on annealing at room temperature. A little reverse annealing was observed in the range of room temperature both in arsenic and antimony doped samples.
- 社団法人応用物理学会の論文
- 1966-05-15
著者
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SAITO Haruo
Department of Radiological Technology, School of Health Sciences, Faculty of Medicine
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FUKUOKA Noboru
Department of Physics, Faculty of Science, Naruto University of Education
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Saito Haruo
Department Of Pharmaceutical Research Lead Chemical Co. Ltd.
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Saito Haruo
College Of General Education Osaka University
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Fukuoka Noboru
College Of General Education Osaka University
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Fukuoka Noboru
Department Of Physics College Of General Education Osaka Univ.
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HIRATA Mitsuji
Department of Physics,College of General Education,Osaka University
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Hirata Mitsuji
College Of General Education Osaka University
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Hirata Mitsuji
Department Of Physics Boston College:(permanent Address)department Of Physics Osaka University
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Saito Haruo
Department Of Physics College Of General Education Osaka Univ.
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Saito Haruo
Department Of Drug Evaluation And Toxicological Sciences Faculty Of Pharmaceutical Sciences Chiba Un
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