Annealing of E Center in Irradiated Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1966-03-15
著者
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Saito Haruo
College Of General Education Osaka University
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Hirata Masako
Department Physics College Of General Education Osaka University
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Hirata Mitsuji
College Of General Education Osaka University
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HIRATA Masako
College of General Education, Osaka University
-
Saito Haruo
Department Physics College Of General Education Osaka University
関連論文
- An Annealing Stage near 4.2 K in Neutron Irradiated Germanium
- Annealing of Defects Formed in Germanium After Irradiations with Particles of Various Energies
- The E_c-0.2 eV Level in Irradiated n-Type Germanium
- Shallow Traps in p-Type Germanium Converted from n-Type by Electron Irradiation
- 80°K -140°K Annealing Stage of p-Type Germanium after Irradiation with 1.5 Me V Electrons at 77°K
- Annealing of Irradiated Silicon Containing Phosphorus Atoms
- Effects of Gamma Irradiation on Minority Carrier Lifetime in Germanium Single Crystals
- Nature of Radiation Defects in Silicon Single Crystals
- Recovery Stages by Lifetime Measurements in Irradiated P-Type Silicon
- A Case of Drug Eruption Caused by the Crude Drug Boi^【○!R】 (Sinomenium Stem/Sinomeni Caulis et Rhizoma)
- The Interactions of Point Defects with Impurities in Silicon
- Annealing of E Center in Irradiated Silicon