Nature of Radiation Defects in Silicon Single Crystals

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概要

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• Floating zone Silicon single crystals containing phosphorus were irradiated with Co 60 γ-rays or electrons of 2 Mev at room temperature. Temperature dependence of and 0.38 ev below the conduction band. The introduction rate of the deep level increased with increasing phosphorus concentration, while that of the shallow level slightly decreased with increasing phosphorus concentration. The activation energy for the annealing of the 0.38 ev level was found to be 0.94 ev in the temperature range, 120-180℃. All of the results obtained can be successfully explained, if Watkins' model was adopted.

• 社団法人応用物理学会の論文
• 1963-11-15

著者

• Saito Haruo

  College Of General Education Osaka University

• Hirata Mitsuji

  Faculty Of Science Osaka University

• Saito H.

  College of General Education, Osaka University

関連論文

• An Annealing Stage near 4.2 K in Neutron Irradiated Germanium
• Annealing of Defects Formed in Germanium After Irradiations with Particles of Various Energies
• The E_c-0.2 eV Level in Irradiated n-Type Germanium
• Shallow Traps in p-Type Germanium Converted from n-Type by Electron Irradiation
• 80°K -140°K Annealing Stage of p-Type Germanium after Irradiation with 1.5 Me V Electrons at 77°K
• Effects of Gamma Irradiation on Minority Carrier Lifetime in Germanium Single Crystals
• Nature of Radiation Defects in Silicon Single Crystals
• Annealing of E Center in Irradiated Silicon

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