Annealing of Defects Formed in Germanium After Irradiations with Particles of Various Energies
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概要
- 論文の詳細を見る
Isochronal annealing of the defect induced in germanium by electrons of 10, 5 or 1.5 MeV or fast neutrons was studied. For the case of crystals irradiated with 10 MeV or 5 MeV electrons, an annealing stage was observed in the range 180 K-240 K. The stage was observed in all specimens doped with antimony, arsenic or phosphorus after irradiation with 10 MeV electrons, but it was not observed for crystals irradiated with 1.5 MeV electrons. These behaviours were discussed and it was concluded that the defect which anneals in the stage is considered to be a stable vacancy-interstitial pair. Considering from the fact that the annealing in the range 260 K-480 K was independent of irradiating energies, the induced defects by 10 MeV electron irradiation are of the same kind as those induced by 1.5 MeV electron irradiation except for the stable vacancy-interstitial pair which anneals near 200 K.
- 社団法人日本物理学会の論文
- 1974-03-15
著者
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SAITO Haruo
Department of Radiological Technology, School of Health Sciences, Faculty of Medicine
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FUKUOKA Noboru
Department of Physics, Faculty of Science, Naruto University of Education
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Saito Haruo
Department Of Pharmaceutical Research Lead Chemical Co. Ltd.
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Saito Haruo
College Of General Education Osaka University
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Tatsumi Yukichi
College Of General Education Osaka University
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Tatsumi Yukichi
Department Of Physics College Of General Education Osaka University
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Fukuoka Noboru
College Of General Education Osaka University
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Fukuoka Noboru
Department Of Physics College Of General Education Osaka Univ.
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Saito Haruo
Department Of Physics College Of General Education Osaka Univ.
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Saito Haruo
Department Of Drug Evaluation And Toxicological Sciences Faculty Of Pharmaceutical Sciences Chiba Un
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