Substitution of Impurity Atoms by Self-Interstitials in Thermal Neutron Irradiated Germanium
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概要
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We have used the recoil energy associated with capture gamma-ray emission subsequent to thermal-neutron absorption to introduce a predetermined concentration of activated ^<71>Ge self-interstitial atoms into Ge. Some of the ^<71>Ge may have recombined with vacant lattice sites, but we found that most of the ^<71>Ge was mobile and migrated to replace a substitutional n- or p-type dopant impurity atom, making it interstitial, if a sufficient concentration of such dopant atoms was available. This model of a replacement is consistent with that proposed by previous investigators for electron-irradiated Si and Ge. Irradiation in another reactor locale with a much lower thermal-to-fast neutron ratio was found to introduce complex defect structures from fast neutron collisions with Ge atoms that trapped a significant fraction of the ^<71>Ge in an interstitial position.
- 社団法人応用物理学会の論文
- 1980-01-05
著者
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SAITO Haruo
Department of Radiological Technology, School of Health Sciences, Faculty of Medicine
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FUKUOKA Noboru
Department of Physics, Faculty of Science, Naruto University of Education
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Saito Haruo
Department Of Pharmaceutical Research Lead Chemical Co. Ltd.
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Cleland J.w.
Solid Stile Division Oak Ridge National Laboratory
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Fukuoka Noboru
Department Of Physics College Of General Education Osaka Univ.
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Saito Haruo
Department Of Drug Evaluation And Toxicological Sciences Faculty Of Pharmaceutical Sciences Chiba Un
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