New Donor Formation in n-Type Czochralski-Grown Silicon
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概要
- 論文の詳細を見る
The effects of preannealing in the temperature range from 350℃ to 550℃ on new donor formation were studied in n-type Czochralski-grown silicon, and it was found that the new donor formation rate is controlled by the density of electrically inactive embryos of new donors. The energy of formation of new donors was found to be 1.7 eV. The effect of new donors on the thermal donor formation was studied through 650℃ annealing and subsequent 450℃ annealing. The thermal donor formation is suppressed in the sample containing new donors. The results indicate that carbon atoms have a complex effect on the formation of oxygen donors.
- 社団法人応用物理学会の論文
- 1985-11-20
著者
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FUKUOKA Noboru
Department of Physics, Faculty of Science, Naruto University of Education
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Fukuoka Noboru
Department Of Science Naruto University Of Teacher Education
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Fukuoka Noboru
Department Of Physics College Of General Education Osaka Univ.
関連論文
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- Radiation Defects in Thermal-Donor-Doped Silicon
- Radiation Defects Produced by Neutron Irradiation in Germanium Single Crystals
- Nature of Oxygen Donors and Radiation Defects in Oxygen-Doped Germanium
- Effects of Carbon Atoms on the Defects in Czochralski-Grown Silicon Formed by Annealing
- Defects Produced in Germanium by Quenching and Electron Irradiation
- Point Defects in Cubic Boron Nitride after Neutron Irradiation
- Electron Paramagnetic Center in Neutron-Irradiated AlN
- F-Type Centers in Neutron-Irradiated AIN
- An Annealing Stage near 4.2 K in Neutron Irradiated Germanium
- Annealing of Defects Formed in Germanium After Irradiations with Particles of Various Energies
- The E_c-0.2 eV Level in Irradiated n-Type Germanium
- Shallow Traps in p-Type Germanium Converted from n-Type by Electron Irradiation
- 80°K -140°K Annealing Stage of p-Type Germanium after Irradiation with 1.5 Me V Electrons at 77°K
- Effects of Gamma Irradiation on Minority Carrier Lifetime in Germanium Single Crystals
- Radiation Defects in n-Type Germanium Studied by Deep Level Transient Spectroscopy
- Defect States in n-Type Germanium Irradiated with 1.5 MeV Electrons
- Oxygen-Related Defects in Irradiated Germanium
- Substitution of Impurity Atoms by Self-Interstitials in Thermal Neutron Irradiated Germanium
- Annealing of Self-Interstitials in Germanium
- New Donor Formation in n-Type Czochralski-Grown Silicon
- Thermal Donor Formation and the Effect of Copper Contamination in Oxygen-Doped Germanium : Semiconductors and Semiconductor Devices
- The Defects Produced by Electron Irradiation and Annealed at About 360K in n-Type Germanium
- Radiation Induced Defects in Germaniumt Single Crystals of High Purity
- Defects in Carbon-Implanted Silicon
- Defects in Neutron-Transmutation-Doped Germanium