Defect States in n-Type Germanium Irradiated with 1.5 MeV Electrons
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概要
- 論文の詳細を見る
The defect levels produced in antimony- or arsenic-doped germanium by irradiation with 1.5 MeV electrons and the annealing behaviour of these materials were studied by the DLTS technique. The position of the levels formed by radiation-induced defects was determined and the dependence of the level position on the species and concentration of the impurity atoms are reported. The defects associated with the E_c-0.40 eV level and the E_c-0.23 eV level are thought to be formed by the association of antimony atoms with unidentified defects. From the results of annealing under injection, the defects associated with the E_c-0.23 eV level are considered to be annealed by a recombination-enhanced mechanism.
- 社団法人応用物理学会の論文
- 1982-06-20
著者
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SAITO Haruo
Department of Radiological Technology, School of Health Sciences, Faculty of Medicine
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FUKUOKA Noboru
Department of Physics, Faculty of Science, Naruto University of Education
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Fukuoka Noboru
Department Of Physics College Of General Education Osaka Univ.
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Saito Haruo
Department Of Physics College Of General Education Osaka University
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Saito Haruo
Department Of Drug Evaluation And Toxicological Sciences Faculty Of Pharmaceutical Sciences Chiba Un
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